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VT30L60CのメーカーはVishayです、この部品の機能は「Dual Trench MOS Barrier Schottky Rectifier」です。 |
部品番号 | VT30L60C |
| |
部品説明 | Dual Trench MOS Barrier Schottky Rectifier | ||
メーカ | Vishay | ||
ロゴ | |||
このページの下部にプレビューとVT30L60Cダウンロード(pdfファイル)リンクがあります。 Total 5 pages
www.DataSheet.co.kr
New Product
VT30L60C, VIT30L60C
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.32 V at IF = 5.0 A
TO-220AB
TMBS ®
TO-262AA
K
VT30L60C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
VIT30L60C
3
2
1
PIN 1
PIN 2
PIN 3
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
60 V
IFSM
200 A
VF at IF = 15 A
0.45 V
TJ max.
150 °C
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, and commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
VT30L60C
VIT30L60C
60
30
15
200
10 000
- 40 to + 150
UNIT
V
A
A
V/μs
°C
Document Number: 89380 For technical questions within your region, please contact one of the following:
Revision: 07-Dec-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 Page www.DataSheet.co.kr
New Product
VT30L60C, VIT30L60C
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
TA = 25 °C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
1000
100
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
0.1
0.01
TA = 25 °C
0.001
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Transient Thermal Impedance Per Diode
10
Junction to Case
1
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Junction Capacitance Per Diode
Document Number: 89380 For technical questions within your region, please contact one of the following:
Revision: 07-Dec-10
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/
3Pages | |||
ページ | 合計 : 5 ページ | ||
|
PDF ダウンロード | [ VT30L60C データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
VT30L60C | Dual Trench MOS Barrier Schottky Rectifier | Vishay |