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VT3060C の電気的特性と機能

VT3060CのメーカーはVishayです、この部品の機能は「Dual High-Voltage Trench MOS Barrier Schottky Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 VT3060C
部品説明 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
メーカ Vishay
ロゴ Vishay ロゴ 




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VT3060C Datasheet, VT3060C PDF,ピン配置, 機能
www.DataSheet.co.kr
New Product
VT3060C, VIT3060C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.38 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA
K
VT3060C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
VIT3060C
3
2
1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
60 V
IFSM
170 A
VF at IF = 15 A
0.57 V
TJ max.
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
VT3060C
VIT3060C
60
30
15
170
10 000
- 55 to + 150
UNIT
V
A
A
V/μs
°C
Document Number: 89235 For technical questions within your region, please contact one of the following:
Revision: 23-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/

1 Page





VT3060C pdf, ピン配列
www.DataSheet.co.kr
New Product
VT3060C, VIT3060C
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
35
30
25
20
15
10
5
Mounted on Specific Heatsink
0
0 25 50 75 100 125
Case Temperature (°C)
150
Fig. 1 - Maximum Forward Current Derating Curve
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
0.1
0.01
TA = 25 °C
0.001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
14
D = 0.5 D = 0.8
12 D = 0.3
D = 0.2
10
8
D = 0.1
6
4
D = 1.0
T
2
D = tp/T
tp
0
0 2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics
10
Junction to Case
1
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 5 - Typical Transient Thermal Impedance
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Instantaneous Forward Voltage (V)
1.0
Fig. 3 - Typical Instantaneous Forward Characteristics
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 6 - Typical Junction Capacitance
Document Number: 89235 For technical questions within your region, please contact one of the following:
Revision: 23-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/


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部品番号部品説明メーカ
VT3060C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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