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VT5200 の電気的特性と機能

VT5200のメーカーはVishayです、この部品の機能は「Trench MOS Barrier Schottky Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 VT5200
部品説明 Trench MOS Barrier Schottky Rectifier
メーカ Vishay
ロゴ Vishay ロゴ 




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VT5200 Datasheet, VT5200 PDF,ピン配置, 機能
www.DataSheet.co.kr
New Product
VT5200, VFT5200, VBT5200, VIT5200
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.58 V at IF = 2.5 A
TO-220AC
TMBS ®
ITO-220AC
VT5200
PIN 1
PIN 2
1
CASE
2
TO-263AB
K
VFT5200
PIN 1
PIN 2
TO-262AA
K
2
1
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 275 °C max. 10 s, per JESD 22-B106 (for
TO-220AC, ITO-220AC and TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
A
NC
VBT5200
NC K
A HEATSINK
VIT5200
NC
A
K
NC
K
A HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
5.0 A
VRRM
200 V
IFSM
80 A
VF at IF = 5.0 A
0.65 V
TJ max.
150 °C
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV)
IFSM
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH
Peak repetitive reverse current
at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
EAS
IRRM
dV/dt
VAC
Operating junction and storage temperature range
TJ, TSTG
VT5200
VFT5200 VBT5200
200
5.0
80
30
0.5
10 000
1500
- 40 to + 150
VIT5200
UNIT
V
A
A
mJ
A
V/μs
V
°C
Document Number: 89176 For technical questions within your region, please contact one of the following:
Revision: 09-Dec-09
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/

1 Page





VT5200 pdf, ピン配列
www.DataSheet.co.kr
New Product
VT5200, VFT5200, VBT5200, VIT5200
Vishay General Semiconductor
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10
TA = 150 °C
1 TA = 125 °C
TA = 100 °C
0.1
0.01
0.001
TA = 25 °C
0.0001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
10
Junction to Case
VFT5200
V(B,I)T5200
1
0.01
0.1 1
10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
Document Number: 89176 For technical questions within your region, please contact one of the following:
Revision: 09-Dec-09
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/


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共有リンク

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部品番号部品説明メーカ
VT5200

Trench MOS Barrier Schottky Rectifier

Vishay
Vishay
VT5202-M3

Trench MOS Barrier Schottky Rectifier

Vishay
Vishay


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