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PDF 2SC2996 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2996 | |
| Descripción | Silicon NPN Epitaxial Type TRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2996
FM/AM RF, MIX, Local, IF
High Frequency Amplifier Applications
2SC2996
Unit: mm
· High stability oscillation voltage on FM local oscillator
· Recommend FM/AM RF, MIX, local and IF
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
Rating
40
30
4
50
-50
150
125
-55~125
Unit
V
V
V
mA
mA
wW
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-236
JEITA
―
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse transfer capacitance
Transition frequency
Collector-base time constant
Noise figure
Power gain
Oscillation output voltage
ICBO
VCB = 40 V, IE = 0
IEBO
VEB = 4 V, IC = 0
hFE
(Note)
VCE = 6 V, IC = 1 mA
Cre
fT
Cc･rbb’
NF
Gpe
VOSC
VCB = 6 V, f = 1 MHz
VCE = 6 V, IC = -1 mA
VCE = 6 V, IE = -1 mA, f = 30 MHz
VCE = 6 V, IE = -1 mA, f = 100 MHz
(Figure 1)
VCE = 6 V, f = 100 MHz (Figure 2)
Note: hFE classification R: 40~80, O: 70~140, Y: 120~240
Min Typ. Max Unit
¾ ¾ 0.1 mA
¾ ¾ 0.5 mA
40 ¾ 240
¾ 0.9 1.3 pF
150 350 ¾ MHz
¾ 15 30 ps
¾ 4.0 ¾ dB
¾ 15 ¾ dB
¾ 150 ¾ mV
1 2003-03-19
1 page  
2SC2996
5 2003-03-19
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2SC2996.PDF ] | |
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