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VSB2045のメーカーはVishayです、この部品の機能は「Photovoltaic Solar Cell Protection Schottky Rectifier」です。 |
部品番号 | VSB2045 |
| |
部品説明 | Photovoltaic Solar Cell Protection Schottky Rectifier | ||
メーカ | Vishay | ||
ロゴ | |||
このページの下部にプレビューとVSB2045ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
www.DataSheet.co.kr
New Product
VSB2045
Vishay General Semiconductor
Photovoltaic Solar Cell Protection Schottky Rectifier
Ultra Low VF = 0.30 V at IF = 5.0 A
TMBS®
P600
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
45 V
IFSM
250 A
VF at IF = 20 A
0.42 V
TOP max.
150 °C
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: P600
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
VRRM
IF(AV) (1)
IF(AV) (2)
IFSM
Operating junction temperature range
Storage temperature range
Junction temperature in DC forward current
without reverse bias, t ≤ 1 h (fig. 2)
TOP
TSTG
TJ (3)
Notes
(1) With heatsink
(2) Without heatsink, free air
(3) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
VSB2045
V2045
45
20
6.5
250
- 40 to + 150
- 40 to + 175
≤ 200
UNIT
V
A
A
°C
°C
°C
Document Number: 89391 For technical questions within your region, please contact one of the following:
Revision: 05-Jan-11
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 Page www.DataSheet.co.kr
New Product
VSB2045
Vishay General Semiconductor
14
D = 0.5
12
D = 0.3
D = 0.8
10 D = 0.2
8
D = 0.1
6
4
D = 1.0
T
2
D = tp/T
tp
0
0 4 8 12 16 20 24
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
100 000
10 000
1000
TA = 150 °C
TA = 125 °C
TA = 100 °C
100
10 TA = 25 °C
1
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Leakage Characteristics
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6
Instantaneous Forward Voltage (V)
0.7
Fig. 4 - Typical Instantaneous Forward Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
P600
100
0.1
1 10
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
100
0.360 (9.1)
0.340 (8.6)
1.0 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
Document Number: 89391 For technical questions within your region, please contact one of the following:
Revision: 05-Jan-11
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/
3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ VSB2045 データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
VSB2045 | Photovoltaic Solar Cell Protection Schottky Rectifier | Vishay |