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VF30120C の電気的特性と機能

VF30120CのメーカーはVishayです、この部品の機能は「Dual High-Voltage Trench MOS Barrier Schottky Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 VF30120C
部品説明 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
メーカ Vishay
ロゴ Vishay ロゴ 




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VF30120C Datasheet, VF30120C PDF,ピン配置, 機能
www.DataSheet.co.kr
New Product
V30120C, VF30120C, VB30120C & VI30120C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V30120C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VF30120C
123
PIN 1
PIN 2
PIN 3
TO-262AA
K
2
1
VB30120C
PIN 1
K
PIN 2
HEATSINK
VI30120C
PIN 1
3
2
1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 15 A
TJ max.
2 x 15 A
120 V
150 A
0.68 V
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB
and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V30120C
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(Fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
Operating junction and storage temperature range
TJ, TSTG
VF30120C VB30120C
120
30
15
150
1500
- 40 to + 150
VI30120C
UNIT
V
A
A
V
°C
Document Number: 89041 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/

1 Page





VF30120C pdf, ピン配列
www.DataSheet.co.kr
New Product
V30120C, VF30120C, VB30120C & VI30120C
Vishay General Semiconductor
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
100
10
1
0.1
0.01
TA = 150 °C
TA = 125 °C
TA = 100 °C
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
10000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1 10
Reverse Voltage (V)
100
Figure 5. Typical Junction Capacitance Per Diode
10
Junction to Case
1
0.01
V(B,I)30120C
0.1 1 10
t - Pulse Duration (s)
100
Figure 6. Typical Transient Thermal Impedance Per Diode
10
Junction to Case
1
0.1
0.01
VF30120C
0.1 1 10
t - Pulse Duration (s)
100
Figure 7. Typical Transient Thermal Impedance Per Diode
Document Number: 89041 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/


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共有リンク

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部品番号部品説明メーカ
VF30120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay
Vishay
VF30120S

High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay
Vishay
VF30120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay
Vishay


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