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VF30100SのメーカーはVishayです、この部品の機能は「High-Voltage Trench MOS Barrier Schottky Rectifier」です。 |
部品番号 | VF30100S |
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部品説明 | High-Voltage Trench MOS Barrier Schottky Rectifier | ||
メーカ | Vishay | ||
ロゴ | |||
このページの下部にプレビューとVF30100Sダウンロード(pdfファイル)リンクがあります。 Total 5 pages
www.vishay.com
VF30100S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 5 A
TMBS ®
ITO-220AB
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
123
VF30100S
PIN 1
PIN 2
PIN 3
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VRRM
IFSM
100 V
250 A
VF at IF = 30 A
0.69 V
TJ max.
150 °C
Package
ITO-220AB
Diode variation
Single diode
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IF(AV)
IFSM
Isolation voltage from terminal to heat sink t = 1 min
VAC
Operating junction and storage temperature range
TJ, TSTG
VF30100S
100
30
250
1500
-40 to +150
UNIT
V
A
A
V
°C
Revision: 09-Nov-15
1 Document Number: 89195
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 Page www.vishay.com
VF30100S
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
35
Resistive or Inductive Load
30
25
20
15
10
5 Mounted on Specific Heatsink
0
0 25 50 75 100 125 150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
1000
100
TA = 150 °C
10 TA = 125 °C
1
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
32
D = 0.5 D = 0.8
28 D = 0.3
24 D = 0.2
D = 0.1
20
D = 1.0
16
12
T
8
4
D = tp/T tp
0
0 4 8 12 16 20 24 28 32 36
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
10 000
1000
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
100
TA = 150 °C
10
TA = 125 °C
TA = 25 °C
1
10
Junction to Case
0.1
0
0.2 0.4 0.6 0.8 1.0
Instantaneous Forward Voltage (V)
1.2
Fig. 3 - Typical Instantaneous Forward Characteristics
1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
Revision: 09-Nov-15
3 Document Number: 89195
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ VF30100S データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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