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VF30100C の電気的特性と機能

VF30100CのメーカーはVishayです、この部品の機能は「Dual High-Voltage Trench MOS Barrier Schottky Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 VF30100C
部品説明 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
メーカ Vishay
ロゴ Vishay ロゴ 




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VF30100C Datasheet, VF30100C PDF,ピン配置, 機能
New Product
V30100C, VF30100C, VB30100C & VI30100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.455 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V30100C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VF30100C
123
PIN 1
PIN 2
PIN 3
TO-262AA
K
2
1
VB30100C
PIN 1
K
PIN 2
HEATSINK
VI30100C
PIN 1
3
2
1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 15 A
TJ max.
2 x 15 A
100 V
160 A
0.63 V
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V30100C
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at tp = 2 µs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
EAS
IRRM
dV/dt
VAC
Operating junction and storage temperature range
TJ, TSTG
VF30100C VB30100C
100
30
15
160
210
1.0
10 000
1500
- 40 to + 150
VI30100C
UNIT
V
A
A
mJ
A
V/µs
V
°C
Document Number: 89010
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
www.vishay.com
1

1 Page





VF30100C pdf, ピン配列
New Product
V30100C, VF30100C, VB30100C & VI30100C
Vishay General Semiconductor
100
TA = 150 °C
TA = 125 °C
10
TA = 25 °C
1
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
1.4
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
100
TA = 150 °C
10
TA = 125 °C
1
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1 10
Reverse Voltage (V)
100
Figure 5. Typical Junction Capacitance
10
Junction to Case
1
0.1
0.01
0.001
0.01
V(B,J)30100C
0.1 1 10
t - Pulse Duration (s)
100
Figure 6. Typical Transient Thermal Impedance Per Diode
10
Junction to Case
1
0.01
VF30100C
0.1 1 10
t - Pulse Duration (s)
100
Figure 7. Typical Transient Thermal Impedance Per Diode
Document Number: 89010
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
www.vishay.com
3


3Pages





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共有リンク

Link :


部品番号部品説明メーカ
VF30100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay
Vishay
VF30100S

High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay
Vishay
VF30100SG

High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay
Vishay


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