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VF20150SG の電気的特性と機能

VF20150SGのメーカーはVishayです、この部品の機能は「High-Voltage Trench MOS Barrier Schottky Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 VF20150SG
部品説明 High-Voltage Trench MOS Barrier Schottky Rectifier
メーカ Vishay
ロゴ Vishay ロゴ 




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VF20150SG Datasheet, VF20150SG PDF,ピン配置, 機能
www.DataSheet.co.kr
New Product
V20150SG, VF20150SG, VB20150SG & VI20150SG
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.57 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20150SG
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
123
VF20150SG
PIN 1
PIN 2
PIN 3
TO-262AA
K
A
NC
VB20150SG
NC K
A HEATSINK
3
2
1
VI20150SG
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
20 A
150 V
140 A
0.77 V
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB
and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20150SG
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
VRRM
IF(AV)
IFSM
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
Operating junction and storage temperature range TJ, TSTG
VF20150SG VB20150SG
150
20
VI20150SG
140
1500
- 55 to + 150
UNIT
V
A
A
V
°C
Document Number: 89060 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/

1 Page





VF20150SG pdf, ピン配列
www.DataSheet.co.kr
New Product
V20150SG, VF20150SG, VB20150SG & VI20150SG
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
100
10 TA = 150 °C
1
TA = 125 °C
0.1 TA = 100 °C
0.01
0.001
TA = 25 °C
0.0001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1 10
Reverse Voltage (V)
100
Figure 5. Typical Junction Capacitance
10
Junction to Case
1
0.01
V(B,I)20150SG
0.1 1 10
t - Pulse Duration (s)
100
Figure 6. Typical Transient Thermal Impedance
10
Junction to Case
1
0.1
0.01
VF20150SG
0.1 1 10
t - Pulse Duration (s)
100
Figure 7. Typical Transient Thermal Impedance
Document Number: 89060 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/


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部品番号部品説明メーカ
VF20150S

High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay
Vishay
VF20150SG

High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay
Vishay


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