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V20120S の電気的特性と機能

V20120SのメーカーはVishayです、この部品の機能は「High-Voltage Trench MOS Barrier Schottky Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 V20120S
部品説明 High-Voltage Trench MOS Barrier Schottky Rectifier
メーカ Vishay
ロゴ Vishay ロゴ 




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V20120S Datasheet, V20120S PDF,ピン配置, 機能
www.DataSheet.co.kr
New Product
V20120S, VF20120S, VB20120S & VI20120S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20120S
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VF20120S
123
PIN 1
PIN 2
PIN 3
TO-262AA
K
A
NC
VB20120S
NC K
A HEATSINK
VI20120S
3
2
1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
20 A
120 V
200 A
0.73 V
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB
and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20120S
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
VRRM
IF(AV)
IFSM
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 min
VAC
Operating junction ans storage temperature range
TJ, TSTG
VF20120S VB20120S
120
20
200
1500
- 40 to + 150
VI20120S
UNIT
V
A
A
V
°C
Document Number: 88993 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/

1 Page





V20120S pdf, ピン配列
www.DataSheet.co.kr
New Product
V20120S, VF20120S, VB20120S & VI20120S
Vishay General Semiconductor
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
100
10
1
0.1
0.01
TA = 150 °C
TA = 125 °C
TA = 100 °C
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1 10
Reverse Voltage (V)
100
Figure 5. Typical Junction Capacitance
10
Junction to Case
1
V(B,I)20120S
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Figure 6. Typical Transient Thermal Impedance
10
Junction to Case
1
VF20120S
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Figure 7. Typical Transient Thermal Impedance
Document Number: 88993 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/


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共有リンク

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