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VF20120CのメーカーはVishayです、この部品の機能は「Dual High-Voltage Trench MOS Barrier Schottky Rectifier」です。 |
部品番号 | VF20120C |
| |
部品説明 | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | ||
メーカ | Vishay | ||
ロゴ | |||
このページの下部にプレビューとVF20120Cダウンロード(pdfファイル)リンクがあります。 Total 4 pages
www.vishay.com
VF20120C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
TMBS ®
ITO-220AB
123
VF20120C
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
120 V
IFSM
120 A
VF at IF = 10 A
TJ max.
0.64 V
150 °C
Package
ITO-220AB
Diode variation
Dual common cathode
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Voltage rating of change (rated VR)
Isolation voltage from terminal to heatsink t = 1 min
Operating junction and storage temperature range
dV/dt
VAC
TJ, TSTG
VF20120C
120
20
10
120
10 000
1500
-40 to +150
UNIT
V
A
A
V/μs
V
°C
Revision: 17-Aug-15
1 Document Number: 89324
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 Page www.vishay.com
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
VF20120C
Vishay General Semiconductor
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
0.1
10
Junction to Case
1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.404 (10.26)
0.384 (9.75)
ITO-220AB
0.076 (1.93) REF.
45° REF.
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
PIN
123
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
Revision: 17-Aug-15
3 Document Number: 89324
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3Pages | |||
ページ | 合計 : 4 ページ | ||
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部品番号 | 部品説明 | メーカ |
VF20120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay |
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