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V80100PのメーカーはVishayです、この部品の機能は「Dual High-Voltage Trench MOS Barrier Schottky Rectifier」です。 |
部品番号 | V80100P |
| |
部品説明 | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | ||
メーカ | Vishay | ||
ロゴ | |||
このページの下部にプレビューとV80100Pダウンロード(pdfファイル)リンクがあります。 Total 5 pages
www.DataSheet.co.kr
New Product
V80100P
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.425 V at IF = 10 A
TMBS®
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
3
2
1
TO-247AD (TO-3P)
PIN 1
PIN 3
PIN 2
CASE
• Low thermal resistance
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 40 A
TJ max.
80 A
100 V
500 A
0.667 V
150 °C
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz
Voltage rate of change (rated VR)
Operating junction and storage temperature range
IRRM
dV/dt
TJ, TSTG
V80100P
100
80
40
500
1.0
10 000
- 40 to + 150
UNIT
V
A
A
A
V/µs
°C
Document Number: 88979 For technical questions within your region, please contact one of the following:
Revision: 26-May-08
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 Page www.DataSheet.co.kr
New Product
V80100P
Vishay General Semiconductor
600
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
500
400
300
200
100
0
1 10 100
Number of Cycles at 60 Hz
Figure 3. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
100
TJ = 150 °C
TJ = 125 °C
10
TJ = 25 °C
1
0.1
0
0.2 0.4 0.6 0.8
Instantaneous Forward Voltage (V)
1.0
Figure 4. Typical Instantaneous Forward Characteristics Per Diode
100
TJ = 150 °C
10
1
TJ = 125 °C
0.1
0.01
TJ = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Reverse Characteristics Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
0.1
1 10
Reverse Voltage (V)
100
Figure 6. Typical Junction Capacitance Per Diode
10
Junction to Case
1
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Figure 7. Typical Transient Thermal Impedance Per Diode
Document Number: 88979 For technical questions within your region, please contact one of the following:
Revision: 26-May-08
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/
3Pages | |||
ページ | 合計 : 5 ページ | ||
|
PDF ダウンロード | [ V80100P データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
V80100P | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay |
V80100PW | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay |