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PDF SI6562CDQ Data sheet ( Hoja de datos )
| Número de pieza | SI6562CDQ | |
| Descripción | N- and P-Channel 20-V (D-S) MOSFETs | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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Si6562CDQ
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFETs
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.022 at VGS = 4.5 V
N-Channel 20
0.036 at VGS = 2.5 V
P-Channel
0.030 at VGS = - 4.5 V
- 20
0.045 at VGS = - 2.5 V
ID (A)
6.7a
5.2a
- 6.1a
- 5.0a
Qg (Typ.)
6.7 nC
17 nC
FEATURES
• Halogen-free
• TrenchFET® Power MOSFETs
APPLICATIONS
• Load Switch
• DC/DC Converter
RoHS
COMPLIANT
D1 1
S1 2
S1 3
G1 4
TSSOP-8
Top View
8 D2
7 S2
6 S2
5 G2
Ordering Information: Si6562CDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 S2
G2
G1
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Source Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20 - 20
± 12
6.7 - 6.1
4.2
5.7b, c
4.5b, c
30
- 4.9
- 5.1b, c
- 4.1b, c
- 30
1.3
0.9b, c
1.6
- 1.4
- 1.0b, c
1.7
1.0 1.1
1.1b, c
1.2b, c
0.7b, c
0.76b, c
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t ≤ 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 145 °C/W.
Symbol
RthJA
RthJF
N-Channel
Typ. Max.
85 110
62 80
P-Channel
Typ. Max.
81 105
57 75
Unit
°C/W
Document Number: 68954
S-82575-Rev. A, 27-Oct-08
www.vishay.com
1
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N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.10
0.08
Si6562CDQ
Vishay Siliconix
ID = 5.6 A
TJ = 150 °C
10
TJ = 25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.4
1.3
1.2
1.1
1.0
ID = 250 µA
0.9
0.8
0.7
0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
0.06
0.04
TJ = 125 °C
0.02
TJ = 25 °C
0.00
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
16
12
8
4
0
0.001
0.01
0.1 1
10
Time (s)
Single Pulse Power
100
1000
10 100 µs
1 ms
1
10 ms
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
100 ms
1 s, 10 s
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 68954
S-82575-Rev. A, 27-Oct-08
www.vishay.com
5
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P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
Si6562CDQ
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 145 °C/W
3. TJM - T A = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
10 100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68954.
Document Number: 68954
S-82575-Rev. A, 27-Oct-08
www.vishay.com
11
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