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PDF SI2366DS Data sheet ( Hoja de datos )
| Número de pieza | SI2366DS | |
| Descripción | N-Channel 30 V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Si2366DS
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.036 at VGS = 10 V
30
0.042 at VGS = 4.5 V
ID (A)a
5.8
5.4
Qg (Typ.)
3.2 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
SOT-23
APPLICATIONS
• DC/DC Converters, High Frequency Switching
• Load Switch
• Portable and Consumer Applications
G1
S2
3D
Top View
Marking Code
H6 XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si2366DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
(3)
G
(1)
(2)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
TC = 25 °C
VDS
VGS
30
± 20
5.8a
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
ID
IDM
IS
PD
TJ, Tstg
4.7
4.5b, c
3.6b, c
20
1.75
1.04b, c
2.1
1.3
1.25b, c
0.8b, c
- 55 to 150
Soldering Recommendations (Peak Temperature)
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Symbol
RthJA
RthJF
Typical
80
40
Maximum
100
60
Unit
°C/W
Document Number: 67509
www.vishay.com
S11-0612-Rev. A, 04-Apr-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
7.0
Si2366DS
Vishay Siliconix
5.6
Package Limited
4.2
2.8
1.4
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
2.5 1.2
2.0
0.9
1.5
0.6
1.0
0.3
0.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
0
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67509
www.vishay.com
S11-0612-Rev. A, 04-Apr-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
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