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PDF SI2303CDS Data sheet ( Hoja de datos )
| Número de pieza | SI2303CDS | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | Vishay Siliconix | |
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P-Channel 30-V (D-S) MOSFET
Si2303CDS
Vishay Siliconix
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)a
0.190 at VGS = - 10 V
- 2.7
- 30
0.330 at VGS = - 4.5 V
- 2.1
Qg (Typ.)
2 nC
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
APPLICATIONS
• Load Switch
RoHS
COMPLIANT
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2303CDS (N3)*
* Marking Code
Ordering Information: Si2303CDS-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IDM
IS
Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
≤5s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 160 °C/W.
Document Number: 69991
S-80798-Rev. A, 14-Apr-08
Symbol
RthJA
RthJF
Typical
80
35
Limit
- 30
± 20
- 2.7
- 2.2
- 1.9b, c
- 1.5b, c
- 10
- 1.75
- 0.83b, c
-5
1.25
2.3
1.5
1.0b, c
0.7b, c
- 55 to 150
Unit
V
A
mJ
W
°C
Maximum
120
55
Unit
°C/W
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3.0
Si2303CDS
Vishay Siliconix
2.4
1.8
1.2
0.6
0.0
0
25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
3.0 1.0
2.4 0.8
1.8 0.6
1.2 0.4
0.6 0.2
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0.0
0
25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69991
S-80798-Rev. A, 14-Apr-08
www.vishay.com
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| PDF Descargar | [ Datasheet SI2303CDS.PDF ] | |
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