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PDF GA75TS120UPBF Data sheet ( Hoja de datos )
| Número de pieza | GA75TS120UPBF | |
| Descripción | Ultrafast Speed IGBT | |
| Fabricantes | Vishay Siliconix | |
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GA75TS120UPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 75 A
INT-A-PAK
FEATURES
• Generation 4 IGBT technology
• Ultrafast: Optimized for high speed 8 kHz to
40 kHz in hard switching, > 200 kHz in resonant
mode
• Very low conduction and switching losses
• HEXFRED® antiparallel diodes with ultrasoft recovery
• Industry standard package
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
VCES
IC DC
VCE(on) at 75 A, 25 °C
1200 V
110 A
2.5 V
BENEFITS
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, welding
• Lower EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Peak switching current
See fig. 17
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation
Operating junction temperature range
Storage temperature range
ICM
ILM
IFM
VGE
VISOL
PD
TJ
TStg
TEST CONDITIONS
TC = 25 °C
TC = 76 °C
Repetitive rating; VGE = 20 V, pulse width
limited by maximum junction temperature
MAX.
1200
110
75
150
150
Any terminal to case, t = 1 minute
TC = 25 °C
TC = 85 °C
150
± 20
2500
390
200
- 40 to + 150
- 40 to + 125
UNITS
V
A
V
W
°C
Document Number: 94427
Revision: 03-May-10
For technical questions, contact: [email protected]
www.vishay.com
1
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1 page  
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GA75TS120UPbF
"Half-Bridge" IGBT INT-A-PAK Vishay High Power Products
(Ultrafast Speed IGBT), 75 A
70
RG1 = 15 Ω
60 RG2 = 0 Ω
TC = 125 °C
50 VCC = 720 V
VGE = 15 V
40
30
20
10
0
0 20 40 60 80 100 120 140 160
IC - Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector to Emitter Current
200
VGE = 20 V
TJ = 125 °C
VCE measured at terminal (peak voltage)
150
100
50
Safe operating area
0
0 200 400 600
800 1000 1200 1400
VCE - Collector to Emitter Voltage (V)
Fig. 12 - Reverse Bias SOA
1000
100
TJ = 125 °C
TJ = 25 °C
10
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VF - Forward Voltage Drop (V)
Fig. 13 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
16 000
12 000
VR = 720 V
TJ = 125 °C
TJ = 25 °C
8000
4000
0
500
1000
IF = 150 A
IF = 75 A
IF = 37 A
1500
2000
dIF/dt (A/µs)
Fig. 14 - Typical Stored Charge vs. dIF/dt
250
VR = 720 V
TJ = 125 °C
TJ = 25 °C
IF = 150 A
200 IF = 75 A
IF = 37 A
150
100
500
1000
1500
2000
dIF/dt (A/µs)
Fig. 15 - Typical Reverse Recovery Time vs. dIF/dt
200
160
IF = 150 A
IF = 75 A
IF = 37 A
120
80
40
0
500
1000
VR = 720 V
TJ = 125 °C
TJ = 25 °C
1500
2000
dIF/dt (A/µs)
Fig. 16 - Typical Recovery Current vs. dIF/dt
Document Number: 94427
Revision: 03-May-10
For technical questions, contact: [email protected]
www.vishay.com
5
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5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet GA75TS120UPBF.PDF ] | |
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