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GA100TS60SFPBF の電気的特性と機能

GA100TS60SFPBFのメーカーはVishay Siliconixです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 GA100TS60SFPBF
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ Vishay Siliconix
ロゴ Vishay Siliconix ロゴ 




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GA100TS60SFPBF Datasheet, GA100TS60SFPBF PDF,ピン配置, 機能
www.DataSheet.co.kr
GA100TS60SFPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK
(Standard Speed IGBT), 100 A
INT-A-PAK
FEATURES
• Standard speed PT IGBT technology
• Standard speed: DC to 1 kHz, optimized for
hard switching speed
• FRED Pt® antiparallel diodes with fast recovery
• Very low conduction losses
• Al2O3 DBC
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed for industrial level
PRODUCT SUMMARY
VCES
IC DC
VCE(on) at 100 A, 25 °C
600 V
220 A
1.11 V
BENEFITS
• Optimized for high current inverter stages (AC TIG welding
machines)
• Direct mounting to heatsink
• Very low junction to case thermal resistance
• Low EMI
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Peak switching current
Gate to emitter voltage
RMS isolation voltage
ICM
ILM
VGE
VISOL
Maximum power dissipation
PD
TEST CONDITIONS
TC = 25 °C
TC = 130 °C
Any terminal to case, t = 1 min
TC = 25 °C
TC = 100 °C
MAX.
600
220
100
440
440
± 20
2500
780
312
UNITS
V
A
V
W
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Collector to emitter leakage current
Diode forward voltage drop
Gate to emitter leakage current
VBR(CES)
VCE(on)
VGE(th)
ICES
VFM
IGES
VGE = 0 V, IC = 1 mA
VGE = 15 V, IC = 100 A
IC = 200 A
VGE = 15 V, IC = 100 A, TJ = 125 °C
IC = 0.25 mA
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 125 °C
IC = 100 A, VGE = 0 V
IC = 100 A, VGE = 0 V, TJ = 125 °C
VGE = ± 20 V
MIN.
600
-
-
-
3
-
-
-
-
-
TYP.
-
1.11
1.39
1.08
-
-
-
1.44
1.25
-
MAX.
-
1.28
-
1.22
6
1
10
1.96
1.54
± 250
UNITS
V
mA
V
nA
Document Number: 94544
Revision: 04-May-10
For technical questions, contact: [email protected]
www.vishay.com
1
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1 Page





GA100TS60SFPBF pdf, ピン配列
www.DataSheet.co.kr
GA100TS60SFPbF
"Half-Bridge" IGBT INT-A-PAK Vishay High Power Products
(Standard Speed IGBT), 100 A
1000
Vge = 15V
100
Tj = 25˚C
Tj = 125˚C
10
0.6 0.8 1 1.2 1.4 1.6 1.8
VCE, Collector-to-Emitter Voltage (V)
Fig. 1 - Typical Output Characteristics
1000
T J = 125˚C
100
TJ = 25˚C
10
Vce = 10V
380μs PULSE WIDTH
1
5.5 6.5 7.5 8.5
VGE, Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Transfer Characteristics
240
200
160
120
80
40
0
25 50 75 100 125 150
TC, Case Temperature (°C)
Fig. 3 - Maximum Collector Current vs.
Case Temperature
1.5
I C = 200A
1.3
1.1 I C= 100A
I = 50A
0.9
0.7
25
50 75 100 125
TJ, Junction Temperature (°C)
150
Fig. 4 - Typical Collector to Emitter Voltage vs.
Junction Temperature
20
Vcc = 400V
Ic = 100A
15
10
5
0
0 100 200 300 400 500 600 700
QG, Total Gate Charge (nC)
Fig. 5 - Typical Gate Charge vs.
Gate to Emitter Voltage
35
Tj = 25˚C, Vce = 480V
30 Vge = 15V, Ic = 100A
25
Eoff
20
15
Eon
10
5
0
10 20 30 40 50
RG, Gate Reistance (Ω)
Fig. 6 - Typical Switching Losses vs.
Gate Resistance
Document Number: 94544
Revision: 04-May-10
For technical questions, contact: [email protected]
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/


3Pages


GA100TS60SFPBF 電子部品, 半導体
www.DataSheet.co.kr
INT-A-PAK IGBT
DIMENSIONS in millimeters (inches)
Outline Dimensions
Vishay Semiconductors
Ø 6.5
(Ø 0.25)
80 (3.15)
17 (0.67) 23 (0.91)
14.3
23 (0.91) (0.56)
5 (0.20)
3 screws M6 x 10
12
66 (2.60)
94 (3.70)
3
37 (1.44)
Document Number: 95173
Revision: 04-May-09
For technical questions, contact: [email protected]
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/

6 Page



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部品番号部品説明メーカ
GA100TS60SFPBF

IGBT ( Insulated Gate Bipolar Transistor )

Vishay Siliconix
Vishay Siliconix


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