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PDF VEC2822 Data sheet ( Hoja de datos )

Número de pieza VEC2822
Descripción P-Channel Silicon MOSFET / Schottky Barrier Diode
Fabricantes Sanyo Semicon Device 
Logotipo Sanyo Semicon Device Logotipo



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No Preview Available ! VEC2822 Hoja de datos, Descripción, Manual

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Ordering number : ENA0961
VEC2822
SANYO Semiconductors
DATA SHEET
VEC2822
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
DC / DC converter.
Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
facilitating high-density mounting.
[MOSFET]
Low ON-resistance
Ultrahigh-speed switching.
1.8V drive.
[SBD]
Low switching noise.
Low leakage current and high reliability due to planar structure.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Marking : CY
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (1200mm20.8mm) 1unit
Ratings
Unit
--20
±10
--3.5
--14
1.0
150
--55 to +125
V
V
A
A
W
°C
°C
15 V
17 V
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O0307PE TI IM TC-00000899 No. A0961-1/6
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VEC2822 pdf
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VEC2822
IF -- VF
[SBD]
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
Forward Voltage, VF -- V
IT10276
PF(AV) -- IO
[SBD]
1.6
Rectangular
wave
1.4 (1) (2) (4) (3)
θ
1.2 360°
1.0 Sine wave
0.8 180°
360°
0.6
0.4 (1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
0.2 (3)Rectangular wave θ=180°
0 (4)Sine wave θ=180°
0 0.5 1.0 1.5 2.0 2.5
Average Output Current, IO -- A IT10432
Tc -- IO
[SBD]
140
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
120 (3)Rectangular wave θ=180°
(4)Sine wave θ=180°
100
*Mounted on a ceramic
board (500mm20.8mm),
80 Rth(j-a)=68°C/W
60
Rectangular
wave
40
θ
360°
Sine
20 wave
180°
(4)
(1) (2)
(3)
0 360°
0 0.5 1.0 1.5 2.0 2.5
Average Output Current, IO -- A IT10434
IFSM -- t
[SBD]
14
Current waveform 50Hz sine wave
12 IS
10 20ms
t
8
10000
1000
100
10
1.0
0.1
IR -- VR
Ta=125°C
100°C
75°C
50°C
25°C
0°C
[SBD]
0.01 --25°C
0.001
0 2 4 6 8 10 12
Reverse Voltage, VR -- V
PR(AV) -- VRM
0.025
(1)Rectangular wave θ=300°
(2)Rectangular wave θ=240°
(3)Rectangular wave θ=180°
0.020 (4)Sine wave θ=180°
0.015
Rectangular
wave
θ
360°
VR
0.010 Sine wave
0.005
180°
360°
VR
14 16
IT10277
[SBD]
(1)
(2)
(3)
(4)
0
0 2 4 6 8 10 12 14 16
Peak Reverse Voltage, VRM -- V IT10433
C -- VR
[SBD]
5
3
2
100
7
5
3
2
10
0.1
23
5 7 1.0
2 3 5 7 10
Reverse Voltage, VR -- V
23
IT10275
6
4
2
0
7 0.01
23
5 7 0.1 2 3
Time, t -- s
5 7 1.0
23
ID00435
No. A0961-5/6
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