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VEC2813 の電気的特性と機能

VEC2813のメーカーはSanyo Semicon Deviceです、この部品の機能は「N-Channel Silicon MOSFET / Schottky Barrier Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 VEC2813
部品説明 N-Channel Silicon MOSFET / Schottky Barrier Diode
メーカ Sanyo Semicon Device
ロゴ Sanyo Semicon Device ロゴ 




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VEC2813 Datasheet, VEC2813 PDF,ピン配置, 機能
www.DataSheet.co.kr
Ordering number : ENA0384A
VEC2813
SANYO Semiconductors
DATA SHEET
VEC2813
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
DC / DC converter.
Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package
facilitating high-density mounting.
[MOSFET]
Low ON-resistance.
1.8V drive.
[SBD]
Short reverse recovery time.
Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : CB
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm) 1unit
50Hz sine wave, 1 cycle
Ratings
Unit
20
±10
3
12
0.8
150
--55 to +125
V
V
A
A
W
°C
°C
30
30
2
10
--55 to +125
--55 to +125
V
V
A
A
°C
°C
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0106 SY IM TC-00000299 / 70306 / 52506PE MS IM TB-00002333 No. A0384-1/6
Datasheet pdf - http://www.DataSheet4U.net/

1 Page





VEC2813 pdf, ピン配列
www.DataSheet.co.kr
Switching Time Test Circuit
[MOSFET]
VIN
4V
0V
VIN
PW=10µs
D.C.1%
G
VDD=10V
ID=1.5A
RL=6.67
D VOUT
VEC2813
P.G 50S
VEC2813
trr Test Circuit
[SBD]
Duty10%
50
10µs
100
--5V
10
trr
ID -- VDS
[MOSFET]
3
2
1
VGS=1.0V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT10933
RDS(on) -- VGS [MOSFET]
150
Ta=25°C
100
ID=0.3A
50
0.7A
1.5A
0
0 2 4 6 8 10
Gate-to-Source Voltage, VGS -- V IT10935
3
VDS=10V
ID -- VGS
[MOSFET]
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Gate-to-Source Voltage, VGS -- V IT10934
RDS(on) -- Ta [MOSFET]
150
100
50
I D=II0DD.3==A01.,7.V5AAG, ,VSV=G1GS.8S=V=2.45.V0V
0
--100
--50 0
50 100 150 200
Ambient Temperature, Ta -- °C
IT10936
No. A0384-3/6
Datasheet pdf - http://www.DataSheet4U.net/


3Pages


VEC2813 電子部品, 半導体
www.DataSheet.co.kr
VEC2813
Note on usage : Since the VEC2813 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of November, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0384-6/6
Datasheet pdf - http://www.DataSheet4U.net/

6 Page



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