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PDF VEC2601 Data sheet ( Hoja de datos )

Número de pieza VEC2601
Descripción N-Channel and P-Channel Silicon MOSFETs
Fabricantes Sanyo Semicon Device　
Logotipo Sanyo Semicon Device Logotipo



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No Preview Available ! VEC2601 Hoja de datos, Descripción, Manual

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Ordering number : ENA0933
VEC2601
SANYO Semiconductors
DATA SHEET
VEC2601
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
• A composite type of a low on-resistance P-channel MOSFET and a small signal N-channel MOSFET for driving
P-channel MOSFET enables high-density mounting.
• Best suited for load switches.
• 2.5V drive.
• 0.75mm mount high.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm)1unit
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : BD
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=100µA
VDS=10V, ID=80mA
N-channel
P-channel
30 --20
±10 ±10
0.15 --3
0.6 --12
0.9
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Ratings
min typ max
Unit
30 V
1 µA
±10 µA
0.4 1.3 V
0.15
0.22
S
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91207PE TI IM TC-00000864 No. A0933-1/6
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VEC2601 pdf
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VEC2601
ID -- VDS
[Pch]
--4.0
--2.0V
--3.5
--1.8V
--3.0
--2.5
--2.0
--1.5
VGS= --1.5V
--1.0
--0.5
0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V IT11952
RDS(on) -- VGS
[Pch]
160
Ta=25°C
140
120
100
ID= --0.3A
80
--2.0A
60
40
20
0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Gate-to-Source Voltage, VGS -- V IT11856
yfs-- ID
[Pch]
3
VDS= --10V
2
10
7
5 Ta= --25°C 75°C
3
2 25°C
1.0
7
--0.1
5
3
2
100
7
5
3
2
10
7
5
--0.1
23
5 7 --1.0
23
Drain Current, ID -- A
SW Time -- ID
5 7 --10
IT06420
[Pch]
VDD= --10V
VGS= --4.5V
td(off)
tf
tr
td(on)
23
5 7 --1.0
23
57
Drain Current, ID -- A
IT06422
--7
VDS= --10V
--6
ID -- VGS
[Pch]
--5
--4
--3
--2
--1
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Gate-to-Source Voltage, VGS -- V IT06417
160
RDS(on) -- Tc
[Pch]
140
120
VGS= --1.8V, ID= --0.3A
100
80
60
VVGGS=S=--2--.54V.5,VI,DI=D-=-1-.-02A.0A
40
20
--60
--10
7
5
3
2
--40 --20
0 20 40 60 80 100
Case Temperature, Tc -- °C
IS -- VSD
120 140 160
IT11857
[Pch]
VGS=0V
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.001
--0.2
2
--0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2
Diode Forward Voltage, VSD -- V IT06421
Ciss, Coss, Crss -- VDS
[Pch]
f=1MHz
1000
7
5
Ciss
3
2
Coss
100 Crss
7
5
3
0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Drain-to-Source Voltage, VDS -- V IT06423
No. A0933-5/6
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