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PDF GW39NC60VD Data sheet ( Hoja de datos )
| Número de pieza | GW39NC60VD | |
| Descripción | STGW39NC60VD | |
| Fabricantes | ST Microelectronics | |
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STGW39NC60VD
40 A - 600 V - very fast IGBT
Features
■ Low CRES / CIES ratio (no cross conduction
susceptibility)
■ IGBT co-packaged with ultra fast free-wheeling
diode
Applications
■ High frequency inverters
■ UPS
■ Motor drivers
■ Induction heating
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behaviour.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STGW39NC60VD
Marking
GW39NC60VD
Package
TO-247
Packaging
Tube
January 2008
Rev 7
1/15
www.st.com
15
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1 page  
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STGW39NC60VD
Electrical characteristics
Table 6. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
td(on)
tr
(di/dt)onf
Turn-on delay time
Current rise time
Turn-on current slope
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 390 V, IC = 30 A,
RG=10 Ω, VGE = 15 V
(see Figure 18)
VCC = 390 V, IC = 30 A,
RG=10Ω, VGE=15 V
TC=125 °C
(see Figure 18)
VCC = 390 V, IC = 30 A,
RG=10 Ω, VGE=15 V
(see Figure 18)
VCC = 390 V, IC = 30 A,
RG=10 Ω, VGE=15 V
TC=125 °C
(see Figure 18)
Min. Typ. Max. Unit
33
13
2500
ns
ns
A/µs
32
14
2280
ns
ns
A/µs
33 ns
178 ns
65 ns
68 ns
238 ns
128 ns
Table 7. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min Typ. Max Unit
Eon (1)
Eoff(2)
Ets
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 30A
RG= 10Ω, VGE= 15V,
(see Figure 20)
VCC = 390V, IC = 30A
RG= 10Ω, VGE= 15V,
TC= 125°C
(see Figure 20)
333
537
870
618
1125
1743
µJ
µJ
µJ
µJ
µJ
µJ
1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode
recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as
external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
5/15
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STGW39NC60VD
3 Test circuit
Figure 18. Test circuit for inductive load
switching
Test circuit
Figure 19. Gate charge test circuit
Figure 20. Switching waveforms
Figure 21. Diode recovery times waveform
11/15
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