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011N40P1のメーカーはKECです、この部品の機能は「KHB011N40P1」です。 |
部品番号 | 011N40P1 |
| |
部品説明 | KHB011N40P1 | ||
メーカ | KEC | ||
ロゴ | |||
このページの下部にプレビューと011N40P1ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
www.DataSheet.co.kr
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS(Min.)= 400V, ID= 10.5A
Drain-Source ON Resistance :
RDS(ON)=0.53 @VGS =10V
Qg(typ.) =32.5nC
MAXIMUM RATING (Tc=25
CHARACTERISTIC
RATING
SYMBOL
KHB011N40F1 UNIT
KHB011N40P1
KHB011N40F2
Drain-Source Voltage
Gate-Source Voltage
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
Tj
Tstg
400
30
10.5 10.5*
6.6 6.6*
42 42*
360
13.5
4.5
135 44
1.07 0.35
150
-55 150
V
V
A
mJ
mJ
V/ns
W
W/
Thermal Resistance, Junction-to-Case RthJC
0.93
Thermal Resistance, Case-to-Sink
RthCS
0.5
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
2.86 /W
- /W
62.5 /W
PIN CONNECTION
D
G
2007. 5. 10
S
Revision No : 0
KHB011N40P1/F1/F2
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB011N40P1
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
KHB011N40F1
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
KHB011N40F2
AC
S
E
LL
M
DD
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.0 +_0.3
B 15.0+_ 0.3
C 2.70+_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_0.2
F 3.0+_0.3
G 12.0 +_0.3
H 0.5+0.1/-0.05
J 13.6 +_0.5
K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_0.1
P 6.8 +_0.1
Q 4.5+_ 0.2
R 2.6+_ 0.2
S 0.5 Typ
TO-220IS
1/1
Datasheet pdf - http://www.DataSheet4U.net/
1 Page www.DataSheet.co.kr
KHB011N40P1/F1/F2
101
VGS
TOP : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom: 4.5V
100
Fig1. ID - VDS
10-1
10-1
100 101
Drain - Source Voltage VDS (V)
Fig3. BVDSS - Tj
1.2
VGS = 0V
IDS = 250µA
1.1
1.0
0.9
0.8
-100
-50 0
50 100
Junction Temperature Tj ( C)
150
Fig5. IS - VSD
101
100 150 C 25 C
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source - Drain Voltage VSD (V)
2007. 5. 10
Revision No : 0
Fig2. ID - VGS
101
100 150 C
25 C
-55 C
10-1
2
468
Gate - Source Voltage VGS (V)
10
Fig4. RDS(ON) - ID
2.0
1.5
VGS = 10V
1.0
VGS = 20V
0.5
0
0 5 10 15 20 25 30 35
Drain Current ID (A)
Fig6. RDS(ON) - Tj
3.0
VGS = 10V
2.5 IDS =5.25A
2.0
1.5
1.0
0.5
0.0
-100
-50
0
50 100
Junction Temperture Tj ( C)
150
3/7
Datasheet pdf - http://www.DataSheet4U.net/
3Pages www.DataSheet.co.kr
KHB011N40P1/F1/F2
Fig14. Gate Charge
ID
Fast
Recovery
Diode
VGS
10 V
0.8 VDSS
1.0 mA
VGS
ID
VDS
Qgs
Qgd
Qg
Q
Fig15. Single Pulsed Avalanche Energy
50V
25Ω
10 V
VGS
BVDSS
L
IAS
VDS
VDD
1
EAS= 2
LIAS2
BVDSS
BVDSS - VDD
ID(t)
Fig16. Resistive Load Switching
tp
0.5 VDSS
25 Ω
10V VGS
VDS
90%
RL
VDS
VGS 10%
td(on) tr
ton
tf
td(off)
toff
VDS(t)
Time
2007. 5. 10
Revision No : 0
6/7
Datasheet pdf - http://www.DataSheet4U.net/
6 Page | |||
ページ | 合計 : 7 ページ | ||
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部品番号 | 部品説明 | メーカ |
011N40P1 | KHB011N40P1 | KEC |