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PDF VSMY7852X01 Data sheet ( Hoja de datos )
| Número de pieza | VSMY7852X01 | |
| Descripción | High Power Infrared Emitting Diode | |
| Fabricantes | Vishay Siliconix | |
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VSMY7852X01
Vishay Semiconductors
High Power Infrared Emitting Diode,
850 nm, Surface Emitter Technology
20783
DESCRIPTION
VSMY7852X01 is an infrared, 850 nm emitting diode based
on surface emitter technology with high radiant power and
high speed, molded in low thermal resistance Little Star
package. A 20 mil chip provides outstanding low forward
voltage and allows DC operation of the device up to 250 mA.
FFEATURES
• Package type: surface mount
• Package form: Little Star®
• Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5
• Peak wavelength: p = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 60°
• Low forward voltage
• Designed for high drive currents: up to 250 mA DC and up
to 1.5 A pulses
• Low thermal resistance: RthJP = 15 K/W
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
AAPPLICATIONS
• Infrared illumination for CMOS cameras (CCTV)
• Driver assistance systems
• Machine vision IR data transmission
PRODUCT SUMMARY
COMPONENT
VSMY7852X01
Ie (mW/sr)
42
Note
• Test conditions see table “Basic Characteristics”
(deg)
± 60
p (nm)
850
tr (ns)
15
ORDERING INFORMATION
ORDERING CODE
VSMY7852X01-GS08
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
REMARKS
MOQ: 2000 pcs, 2000 pcs/reel
PACKAGE FORM
Little Star
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/pin
tp/T = 0.5, tp 100 μs
tp = 100 μs
Acc. figure 7, J-STD-20
Acc. J-STD-051, soldered on PCB
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJP
5
250
500
1.5
500
125
- 40 to + 100
- 40 to + 100
260
15
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number: 81146
Rev. 1.0, 31-Mar-11
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
VSMY7852X01
High Power Infrared Emitting Diode, Vishay Semiconductors
850 nm, Surface Emitter Technology
PACKAGE DIMENISONS in millimeters
20848
Document Number: 81146
Rev. 1.0, 31-Mar-11
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet VSMY7852X01.PDF ] | |
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