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VSMY1850 の電気的特性と機能

VSMY1850のメーカーはVishay Siliconixです、この部品の機能は「High Speed Infrared Emitting Diodes」です。


製品の詳細 ( Datasheet PDF )

部品番号 VSMY1850
部品説明 High Speed Infrared Emitting Diodes
メーカ Vishay Siliconix
ロゴ Vishay Siliconix ロゴ 




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VSMY1850 Datasheet, VSMY1850 PDF,ピン配置, 機能
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VSMY1850
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 850 nm,
Surface Emitter Technology
22119
DESCRIPTION
VSMY1850 is an infrared, 850 nm emitting diode based on
GaAlAs surface emitter chip technology with high radiant
intensity, high optical power and high speed, molded in
clear, untinted 0805 plastic package for surface mounting
(SMD).
FEATURES
• Package type: surface mount
• Package form: 0805
• Dimensions (L x W x H in mm): 2 x 1.25 x 0.85
• Peak wavelength: λp = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• High speed
• Angle of half sensitivity: ϕ = ± 60°
• Suitable for high pulse current operation
• 0805 standard surface-mountable package
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• IrDA compatible data transmission
• Miniature light barrier
• Photointerrupters
• Optical switch
• Emitter source for proximity sensors
• IR touch panels
• IR Flash
• IR illumination
• 3D TV
PRODUCT SUMMARY
COMPONENT
VSMY1850
Ie (mW/sr)
10
Note
• Test conditions see table “Basic Characteristics“
ϕ (deg)
± 60
λp (nm)
850
tr (ns)
10
ORDERING INFORMATION
ORDERING CODE
VSMY1850
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
REMARKS
MOQ: 3000 pcs, 3000 pcs/reel
PACKAGE FORM
0805
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
Document Number: 83397
Rev. 1.0, 22-Dec-10
For technical questions, contact: [email protected]
www.vishay.com
1
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VSMY1850 pdf, ピン配列
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VSMY1850
High Speed Infrared Emitting Diodes, Vishay Semiconductors
850 nm, Surface Emitter Technology
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10
tp = 100 µs
1
0.1
0.01
0.001
0
22097
0.5 1 1.5 2 2.5 3
VF - Forward Voltage (V)
3.5
Fig. 3 - Forward Current vs. Forward Voltage
0° 10° 20°
30°
40°
1.0
0.9 50°
0.8 60°
70°
0.7
80°
0.6 0.4 0.2
94 8013
0
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
1000
100
tp = 100 µs
10
1
0.1
0.001
22110
0.01 0.1
IF - Forward Current (A)
1
Fig. 4 - Radiant Intensity vs. Forward Current
1
0.75
IF = 30 mA
0.5
0.25
0
650
21776-1
750 850
λ - Wavelength (nm)
950
Fig. 5 - Relative Radiant Power vs. Wavelength
Document Number: 83397
Rev. 1.0, 22-Dec-10
For technical questions, contact: [email protected]
www.vishay.com
3
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VSMY1850 電子部品, 半導体
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VSMY1850
Vishay Semiconductors High Speed Infrared Emitting Diodes,
850 nm, Surface Emitter Technology
REEL DIMENSIONS in millimeters
8.4 +2.5
8.4 +0.15
Form of the leave open
of the wheel is supplier specific.
Z
Z 2:1
14.4 max.
Drawing-No.: 9.800-5096.01-4
Issue: 2; 26.04.10
20875
technical drawings
according to DIN
specifications
www.vishay.com
6
For technical questions, contact: [email protected]
Document Number: 83397
Rev. 1.0, 22-Dec-10
Datasheet pdf - http://www.DataSheet4U.net/

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部品番号部品説明メーカ
VSMY1850

High Speed Infrared Emitting Diodes

Vishay Siliconix
Vishay Siliconix


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