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PDF 2SD2150 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2150 | |
| Descripción | NPN Plastic-Encapsulate Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
2SD2150
NPN
Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
Features
* Excellent Current-to-Gain Characteristics
* Low Collector Saturation Voltage, Typically
VCE(SAT)=0.5V(Max.) for IC/IB=2A/0.1A
Marking: CFQ, CFR, CFS
1
2
3
1.BASE
2.COLLECTOR
3.EMITTER
SOT-89
4.4~4.6
1.4~1.8
1.4~1.6
0.36~0.56
1.5Ref.
2.9~3.1
0.32~0.52
0.35~0.44
Dimensision in Millimeter
Absolute Maximum Ratings at TA=25oC
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
40
VCEO
Collector-Emitter Voltage
20
VEBO
IC
Emitter-Base Voltage
Collector Current
6
3
PD Total Power Dissipation
500
TJ,Tstg
Junction and Storage Temperature
-55~+150
* These rating are limiting vaules above which the serviceability of any semiconductor device may be impaired.
Units
V
V
V
A
mW
CO
ELECTRICAL CHARACTERISTICS Tamb=25oC unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
* fT
Cob
Min
40
20
6
-
-
-
120
-
-
Typ.
-
-
-
-
-
-
-
290
25
Max
-
-
-
0.1
0.1
0.5
560
-
-
Unit
V
V
V
uA
uA
V
MHz
pF
Test Conditions
I C=50 µA,IE=0
IC=1 mA,IB=0
I E=50 µA,IC=0
VCB= 30V,IE=0
VEB=5V,IC=0
IC=2 A,IB=100mA
VCE= 2 V, IC=100mA
VCE= 2 V, IC=500mA ,f=100MHz
VCB=10V, f=1MHz,IE=0
*Pulse test: tp 300µS, 0.02.
CLASSIFICATION OF hFE
Rank
Q
Range
120~270
R
180~390
S
270~560
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
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