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PDF 2SA965 Data sheet ( Hoja de datos )
| Número de pieza | 2SA965 | |
| Descripción | Silicon PNP Epitaxial Type Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SA965 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA965
Power Amplifier Applications
Driver-Stage Amplifier Applications
2SA965
Unit: mm
• Complementary to 2SC2235.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−120
V
Collector-emitter voltage
VCEO
−120
V
Emitter-base voltage
VEBO −5 V
Collector current
IC
−800
mA
Emitter current
IE 800 mA
Collector power dissipation
PC 900 mW
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
TO-92MOD
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-5J1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.36 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-09
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SA965.PDF ] | |
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