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SBP13007-H1 の電気的特性と機能

SBP13007-H1のメーカーはSemiWell Semiconductorです、この部品の機能は「High Voltage Fast-Switching NPN Power Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 SBP13007-H1
部品説明 High Voltage Fast-Switching NPN Power Transistor
メーカ SemiWell Semiconductor
ロゴ SemiWell Semiconductor ロゴ 




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SBP13007-H1 Datasheet, SBP13007-H1 PDF,ピン配置, 機能
SemiWell Semiconductor
SBP13007- H1
High Voltage Fast-Switching NPN Power Transistor
Features
- Very High Switching Speed (Typical [email protected])
- Minimum Lot-to-Lot hFE Variation
- Short storge time
- Wide Reverse Bias S.O.A
General Description
This device is designed for high voltage, high speed switching char-
acteristic,especially suitable for ballast system.
Symbol
1.Base
2.Collector
3.Emitter
TO-220
Absolute Maximum Ratings
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PC
TSTG
TJ
Parameter
Collector-Emitter Voltage ( VBE = 0 )
Collector-Emitter Voltage ( IB = 0 )
Emitter-Base Voltage ( IC = 0 )
Collector Current
Collector Peak Current ( tP 5 ms )
Base Current
Base Peak Current ( tP 5 ms )
Total Dissipation at TC = 25 °C
Storage Temperature
Max. Operating Junction Temperature
Thermal Characteristics
Symbol
RθJC
www.DataSheet4RUθJ.Acom
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
123
Value
700
400
9.0
8.0
16
4.0
8.0
80
- 65 ~ 150
150
Value
1.56
62.5
Aug, 2003. Rev. 3
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
Units
V
V
V
A
A
A
A
W
°C
°C
Units
°C/W
°C/W
1/6

1 Page





SBP13007-H1 pdf, ピン配列
Fig 1. Static Characteristics
12
10
IB = 2000mA
IB = 1600mA
IB = 1200mA
8 IB = 1000mA
IB = 800mA
6 IB = 600mA
IB = 400mA
4 IB = 200mA
2
IB = 0mA
0
0 1 2 3 4 5 6 7 8 9 10
VCE, Collector-Emitter Voltage [V]
Fig 3. Collector-Emitter Saturation Voltage
10
1
TJ = 125oC
0.1
0.01
0.1
TJ = 25oC
Note :
hFE = 5
1
IC, Collector Current [A]
10
Fig 5. Resistive Load Fall Time
1000
100
www.DataShee10t40U.com 2
TJ = 25 oC
Notes :
VCC = 125V
hFE = 5
IB1 = - IB2
46
IC, Collector Current [A]
8
10
SBP13007-H1
Fig 2. DC Current Gain
45
40
35
30 TJ = 125 oC
25
TJ = 25 oC
20
15
Notes :
10
VCE = 5V
5 VCE = 1V
0
0.01 0.1
1
IC, Collector Current [A]
10
Fig 4. Base-Emitter Saturation Voltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.1
TJ = 25oC
TJ = 125oC
Note :
hFE = 5
1
IC, Collector Current [A]
10
Fig 6. Resistive Load Storage Time
10
Notes :
VCC = 125V
hFE = 5
IB1 = - IB2
TJ = 25oC
1
012345678
IC, Collector Current [A]
3/6


3Pages


SBP13007-H1 電子部品, 半導体
SBP13007-H1
TO-220 Package Dimension
Dim.
mm
Inch
Min. Typ. Max. Min. Typ. Max.
A 9.7
10.1 0.382
0.398
B 6.3
6.7 0.248
0.264
C 9.0
9.47 0.354
0.373
D 12.8
13.3 0.504
0.524
E 1.2
1.4 0.047
0.055
F 1.7
0.067
G 2.5
0.098
H 3.0
3.4 0.118
0.134
I 1.25
1.4 0.049
0.055
J 2.4
2.7 0.094
0.106
K 5.0
5.15 0.197
0.203
L 2.2
2.6 0.087
0.102
M 1.25
1.55 0.049
0.061
N 0.45
0.6 0.018
0.024
O 0.6
1.0 0.024
0.039
φ 3.6
0.142
www.DataSheet4U.com
6/6
E
B
F
C
A HI
C1.0
G
D
L
1
2
3
J
K
N
φ
M
1. Base
2. Collector
3. Emitter
O

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
SBP13007-H1

High Voltage Fast-Switching NPN Power Transistor

SemiWell Semiconductor
SemiWell Semiconductor
SBP13007-H2

High Voltage Fast-Switching NPN Power Transistor

SemiWell Semiconductor
SemiWell Semiconductor


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