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N01L6183A の電気的特性と機能

N01L6183AのメーカーはON Semiconductorです、この部品の機能は「1Mb Ultra-Low Power Asynchronous CMOS SRAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 N01L6183A
部品説明 1Mb Ultra-Low Power Asynchronous CMOS SRAM
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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N01L6183A Datasheet, N01L6183A PDF,ピン配置, 機能
N01L6183A
1Mb Ultra-Low Power Asynchronous CMOS SRAM
64K × 16 bit
Overview
The N01L6183A is an integrated memory device
containing a 1 Mbit Static Random Access Memory
organized as 65,536 words by 16 bits. The device
is designed and fabricated using ON
Semiconductor’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with a single chip
enable (CE) control and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently. The N01L6183A is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 64Kb x 16 SRAMs.
Product Family
Features
• Single Wide Power Supply Range
1.65 to 2.2 Volts
• Very low standby current
0.5µA at 1.8V (Typical)
• Very low operating current
0.7mA at 1.8V and 1µs (Typical)
• Very low Page Mode operating current
0.5mA at 1.8V and 1µs (Typical)
• Simple memory control
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.2V
• Very fast output enable access time
30ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
able
Part Number
N01L6183AB
N01L6183AT
N01L6183AB2
N01L6183AT2
Package Type
Operating
Power
Temperature Supply (Vcc)
Speed
Standby
Operating
Current (ISB), Current (Icc),
Typical
Typical
48 - BGA
44 - TSOP II
48 - BGA Green
-40oC to +85oC
1.65V - 2.2V
70ns @ 1.8V
85ns @ 1.65V
0.5 µA
0.7 mA @
1MHz
44 - TSOP II Green
Pin Configurations
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O4
I/O5
I/O6
I/O7
WE
A15
A14
A13
A12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
PIN
ONE
44 A5
43 A6
42 A7
41 OE
40 UB
39 LB
38 I/O15
37 I/O14
36 I/O13
35 I/O12
34 VSS
33 VCC
32 I/O11
31 I/O10
30 I/O9
29 I/O8
28 NC
27 A8
26 A9
25 A10
24 A11
23 NC
123456
A LB OE A0
B I/O8 UB A3
C I/O9 I/O10 A5
A1 A2 NC
A4 CE I/O0
A6 I/O1 I/O2
D VSS I/O11 NC A7 I/O3 VCC
E VCC I/O12 NC NC I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 NC A12 A13 WE I/O7
H NC A8 A9 A10 A11 NC
48 Pin BGA (top)
6 x 8 mm
Pin Descriptions
Pin Name
A0-A15
WE
CE
OE
LB
UB
I/O0-I/O15
NC
VCC
VSS
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Not Connected
Power
Ground
©2008 SCILLC. All rights reserved.
July 2008 - Rev. 8
www.DataSheet.in
Publication Order Number:
N01L6183A/D

1 Page





N01L6183A pdf, ピン配列
N01L6183A
Absolute Maximum Ratings1
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
VIN,OUT
VCC
PD
TSTG
TA
TSOLDER
–0.3 to VCC+0.3
–0.3 to 3.0
500
–40 to 125
-40 to +85
260oC, 10sec
V
V
mW
oC
oC
oC
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item
Symbol
Test Conditions
Min.
Typ1
Max Unit
Supply Voltage
VCC
1.65 1.8
2.2 V
Data Retention Voltage
VDR Chip Disabled3
1.2
V
Input High Voltage
VIH
0.7VCC
VCC+0.3 V
Input Low Voltage
VIL
–0.3
0.3VCC V
Output High Voltage
VOH
IOH = 0.2mA
VCC–0.3
V
Output Low Voltage
VOL IOL = -0.2mA
0.3 V
Input Leakage Current ILI VIN = 0 to VCC
0.5 µA
Output Leakage Current
ILO OE = VIH or Chip Disabled
0.5 µA
Read/Write Operating Supply Current
@ 1 µs Cycle Time2
ICC1
VCC=2.2 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
0.7 3.0 mA
Read/Write Operating Supply Current
@ 85 ns Cycle Time2
ICC2
VCC=2.2 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
8 16 mA
Page Mode Operating Supply Current
@ 85ns Cycle Time2 (Refer to Power
Savings with Page Mode Operation
ICC3
VCC=2.2 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0,
3
mA
diagram)
Read/Write Quiescent Operating Sup-
ply Current3
ICC4
VCC=2.2 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0,
f=0
20 µA
Maximum Standby Current3
VIN = VCC or 0V
ISB1 Chip Disabled
tA= 85oC, VCC = 2.2 V
0.5 10 µA
Maximum Data Retention Current3
IDR
VCC = 1.2V, VIN = VCC or 0
Chip Disabled, tA= 85oC
5 µA
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and are not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
3. This device assumes a standby mode if the chip is disabled (CE high). In order to achieve low standby current all inputs must be
within 0.2 volts of either VCC or VSS
www.DataSheet.in
Rev. 8 | Page 3 of 10 | www.onsemi.com


3Pages


N01L6183A 電子部品, 半導体
N01L6183A
Timing of Read Cycle (CE = OE = VIL, WE = VIH)
tRC
Address
tAA
tOH
Data Out
Previous Data Valid
Timing Waveform of Read Cycle (WE= VIH)
tRC
Address
CE
OE
LB, UB
Data Out
tAA
tCO
tLZ
tOE
tOLZ
tLBLZ, tUBLZ
High-Z
tLB, tUB
Data Valid
tHZ
tOHZ
tLBHZ, tUBHZ
Data Valid
www.DataSheet.in
Rev. 8 | Page 6 of 10 | www.onsemi.com

6 Page



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部品番号部品説明メーカ
N01L6183A

1Mb Ultra-Low Power Asynchronous CMOS SRAM

ON Semiconductor
ON Semiconductor


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