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FDZ3N513ZTのメーカーはFairchild Semiconductorです、この部品の機能は「30V Integrated NMOS And Schottky Diode」です。 |
部品番号 | FDZ3N513ZT |
| |
部品説明 | 30V Integrated NMOS And Schottky Diode | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDZ3N513ZTダウンロード(pdfファイル)リンクがあります。 Total 7 pages
DataSheet.in
FDZ3N513ZT
July 2010
Integrated NMOS and Schottky Diode
Features
General Description
Monolithic NMOS and Schottky Diode
Ultra-small form factor 1mm x 1mm WLCSP
Max rDS(on) = 462 mΩ at VGS = 4.5 V, ID = 0.3 A
Max rDS(on) = 520 mΩ at VGS = 3.2 V, ID = 0.3 A
HBM ESD protection level > 2000V (Note3)
RoHS Compliant
The FDZ3N513ZT is a monolithic NMOS/ Schottky combination
(FETky) and is designed and wired to function as a discontinu-
ous conduction mode (DCM) boost LED power train for mobile
LED backlighting applications.
Application
Boost Converter Power Train for single cell Li-ion LED
backlighting
D
SK
G
Pin 1
WL-CSP 3D Bumps Facing Up View
WL-CSP 3D Bumps Facing Down View
WL-CSP 1.0X1.0 Bumps Facing Up View
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
PD
ID
VRRM
IO
TJ, TSTG
ESD
NMOS Drain to Source Voltage
NMOS Gate to Source Voltage
Power Dissipation @ TA = 25°C
Maximum Continuous NMOS Drain Current
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Operating Junction and Storage Temperature
Electrostatic Discharge Protection
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient - 1in2, 2oz. Copper
Thermal Resistance, Junction to Ambient - Minimum Pad
(Note 1a)
(Note 1a)
CDM
(Note 1a)
(Note 1b)
Ratings
30
-0.3/5.5
1
1.1
25
0.3
-55/125
2000
100
260
Units
V
V
W
A
V
A
°C
V
°C/W
°C/W
Package Marking and Ordering Information
Part Number
FDZ3N513ZT
Device Marking
Z3
Package
WL-CSP 1.0X1.0
Reel Size
7”
Tape Width
8mm
Quantity
5000 units
©2010 Fairchild Semiconductor Corporation
FDZ3N513ZT Rev. C
1
www.fairchildsemi.com
1 Page DataSheet.in
Typical Characteristics TJ = 25°C unless otherwise noted
2
VGS = 4.5 V
VGS = 3.5 V
1.5
VGS = 2.5 V
1.0 VGS = 1.5 V
0.5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
2.0
1.8
VGS = 4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.6
1.4
VGS = 3.5 V
1.2 VGS = 2.5 V
1.0
0.0
VGS = 1.8 V
0.5 1.0 1.5
ID, DRAIN CURRENT (A)
2.0
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.0
1.8
ID = 0.3 A
VGS = 4.5 V
1.6
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
1600
1400
1200
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 0.3 A
1000
800
TJ = 125 oC
600
400
TJ = 25 oC
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS, GATE TO SOURCE VOLTAGE (V)
4.5
Figure 4. On-Resistance vs Gate to
Source Voltage
2.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.5 VDS = 5 V
TJ = 150 oC
1.0
TJ = 25 oC
0.5
TJ = -55 oC
0
0.5 1.0 1.5 2.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
2
VGS = 0 V
1
TJ = 150 oC
TJ = 25 oC
0.1
0.2
TJ = -55 oC
0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2010 Fairchild Semiconductor Corporation
FDZ3N513ZT Rev. C
3
www.fairchildsemi.com
3Pages DataSheet.in
Dimensional Outline and Pad Layout
Product Specific Dimensions
Product
FDZ3N513ZTUCX
D
1.000 +/-0.030
E
1.000 +/-0.030
X
0.018
Y
0.018
©2010 Fairchild Semiconductor Corporation
FDZ3N513ZT Rev. C
6
www.fairchildsemi.com
6 Page | |||
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部品番号 | 部品説明 | メーカ |
FDZ3N513ZT | 30V Integrated NMOS And Schottky Diode | Fairchild Semiconductor |