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PDF STB28NM50N Data sheet ( Hoja de datos )
| Número de pieza | STB28NM50N | |
| Descripción | TO-247 MDmesh II Power MOSFET | |
| Fabricantes | ST Microelectronics | |
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STB28NM50N, STF28NM50N
STP28NM50N, STW28NM50N
N-channel 500 V, 0.135 Ω, 21 A D2PAK, TO-220, TO-220FP, TO-247
MDmesh™ II Power MOSFET
Features
Type
STB28NM50N
STF28NM50N
STP28NM50N
STW28NM50N
VDSS
(@Tjmax)
550 V
RDS(on)
max
< 0.158 Ω
ID
21 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
These devices are made using the second
generation of MDmeshTM technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-220FP
3
2
1
TO-220
3
1
D²PAK
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STB28NM50N
STF28NM50N
STP28NM50N
STW28NM50N
Marking
28NM50N
Package
D²PAK
TO-220FP
TO-220
TO-247
July 2010
Doc ID 17432 Rev 1
Packaging
Tape and reel
Tube
1/18
www.st.com
18
1 page  
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
2 Electrical characteristics
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Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
ID = 1 mA, VGS = 0
VDS = max rating
VDS = max rating, @125 °C
VGS = ± 20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 10.5 A
Min. Typ. Max. Unit
500 V
1 µA
10 µA
100 nA
2 3 4V
0.135 0.158 Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
1735
- 122 -
4.3
pF
pF
pF
Coss(tr)(1)
Equivalent output
capacitance time related
Coss(er)(2)
Equivalent output
capacitance energy related
VGS = 0, VDS = 0 to 50 V
- 122 -
pF
- 86 -
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
Rg Gate input resistance
VDD = 400 V, ID = 21 A,
VGS = 10 V,
(see Figure 18)
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
50 nC
- 9.5 - nC
25 nC
- 2.7 - Ω
1. Coss(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from
0 to 80% VDSS.
2. Coss(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from
0 to 80% VDSS.
Doc ID 17432 Rev 1
5/18
5 Page 
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
4 Package mechanical data
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Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Doc ID 17432 Rev 1
11/18
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet STB28NM50N.PDF ] | |
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