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N04Q1618C2B の電気的特性と機能

N04Q1618C2BのメーカーはAMI SEMICONDUCTORです、この部品の機能は「4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ」です。


製品の詳細 ( Datasheet PDF )

部品番号 N04Q1618C2B
部品説明 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ
メーカ AMI SEMICONDUCTOR
ロゴ AMI SEMICONDUCTOR ロゴ 




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N04Q1618C2B Datasheet, N04Q1618C2B PDF,ピン配置, 機能
AMI Semiconductor, Inc.
ULP Memory Solutions
670 North McCarthy Blvd. Suite 220
Milpitas, CA 95035
PH: 408-935-7777, FAX: 408-935-7770
N04Q1618C2B
Advance wInwwfo.DramtaShaeetti4oU.ncom
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual
Vcc and VccQ for Ultimate Power Reduction
256K×16 bit POWER SAVER TECHNOLOGY
Overview
Features
The N04Q16yyC2B are ultra-low power memory
devices containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using AMI
Semiconductor’s advanced CMOS technology to
provide ultra-low active and standby power. The
device operates with two chip enable (CE1 and
CE2) controls and output enable (OE) to allow for
easy memory expansion. Byte controls (UB and
LB) allow the upper and lower bytes to be
accessed independently. The 4Mb SRAM is
optimized for the ultimate in low power and is
suited for various applications where ultra-low-
power is critical such as medical applications,
battery backup and power sensitive hand-held
devices. The unique page mode operation saves
active operating power and the dual power supply
rails allow very low voltage operation while
maintaining 3V I/O capability. The device can
operate over a very wide temperature range of 0oC
to +70oC for the lowest power and is also available
in the industrial range of -40oC to +85oC. The
devices are available in standard BGA and TSOP
packages. The devices are also available as
Known Good Die (KGD) for embedded package
applications.
Product Options
• Multiple Power Supply Ranges
1.1V - 1.3V
1.65V - 1.95V
• Dual Vcc / VccQ Power Supplies
1.2V Vcc with 3V VccQ
1.8V Vcc with 3V VccQ
• Very low standby current
50nA typical for 1.2V operation
• Very low operating current
400µA typical for 1.2V operation at 1µs
• Very low Page Mode operating current
80µA typical for 1.2V operation at 1µs
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Automatic power down to standby mode
• BGA, TSOP and KGD options
• RoHS Compliant
Part Number
Typical
Standby
Current
Vcc
(V)
VccQ
(V)
Speed
Typical
Operating
(nS) Operating Current Temperature
N04Q1612C2Bx-15C1
N04Q1618C2Bx-15C1
N04Q1618C2Bx-70C
50nA
50nA
200nA
1.2 1.2, 1.8, 3.0 150ns
150ns
1.8 1.8, 3.0 70ns
0.4 mA @ 1MHz
0.4 mA @ 1MHz
0.6 mA @ 1MHz
0oC to +70oC
N04Q1618C2Bx-85C 200nA
85ns 0.6 mA @ 1MHz
1. Part numbers are under development. Please contact your local sales representative for details.
Stock No. 23451-D 11/06
The specification is ADVANCE INFORMATION and subject to change without notice.
1

1 Page





N04Q1618C2B pdf, ピン配列
AMI Semiconductor, Inc.
Functional Block Diagram
Address
Inputs
(A1 - A4)
Word
Address
Decode
Logic
N04Q1618C2B
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Address
Inputs
(A0, A5 - A17)
Page
Address
Decode
Logic
CE1
CE2
WE
OE
UB
LB
Control
Logic
4Mb
RAM Array
Input/
Output
Mux
I/O0 - I/O7
and
Buffers
I/O8 - I/O15
Functional Description
CE1 CE2 WE OE UB1 LB1
I/O0 - I/O151
MODE
POWER
HXXXXX
High Z
Standby2
Standby
XLXXXX
L HX XHH
High Z
High Z
Standby2
Standby
Standby
Standby
L H L X3 L1 L1
L H H L L1 L1
L H H H L1 L1
Data In
Data Out
High Z
Write3
Read
Active
Active
Active
Active
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
I/O Capacitance
CIN VIN = 0V, f = 1 MHz, TA = 25oC
CI/O VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Min Max Unit
8 pF
8 pF
Stock No. 23451-D 11/06
The specification is ADVANCE INFORMATION and subject to change without notice.
3


3Pages


N04Q1618C2B 電子部品, 半導体
AMI Semiconductor, Inc.
Power Savings with Page Mode Operation (WE = VIH)
N04Q1618C2B
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Page Address
(A0, A5-A17)
Word Address
(A1-A4)
CE1
CE2
OE
LB, UB
Word 1
Open page
Word 2
...
Word 16
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 16-bit words of data are read from the open page. By treating addresses A1 - A4 as the least
significant bits and addressing the 16 words within the open page, power is reduced to the page mode
value which is considerably lower than standard operating currents for low power SRAMs.
Stock No. 23451-D 11/06
The specification is ADVANCE INFORMATION and subject to change without notice.
6

6 Page



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部品番号部品説明メーカ
N04Q1618C2B

4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ

AMI SEMICONDUCTOR
AMI SEMICONDUCTOR


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