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N04M1618L1A の電気的特性と機能

N04M1618L1AのメーカーはNanoAmp Solutionsです、この部品の機能は「4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit」です。


製品の詳細 ( Datasheet PDF )

部品番号 N04M1618L1A
部品説明 4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit
メーカ NanoAmp Solutions
ロゴ NanoAmp Solutions ロゴ 




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N04M1618L1A Datasheet, N04M1618L1A PDF,ピン配置, 機能
NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N04M1618L1Awww.DataSheet4U.com
4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
256Kx16 bit
Overview
Features
The N04M1618L1A is an integrated memory
device intended for non life-support (Class 1 or
2) medical applications. This device is a 4
megabit memory organized as 262,144 words by
16 bits. The device is designed and fabricated
using NanoAmp’s advanced CMOS technology
with reliability inhancements for medical users. The
base design is the same as NanoAmp’s
N04M1618L2A, which has further reliability
processing for life-support (Class 3) medical
applications. The device operates with two chip
enable (CE1 and CE2) controls and output enable
(OE) to allow for easy memory expansion. Byte
controls (UB and LB) allow the upper and lower
bytes to be accessed independently and can also
be used to deselect the device. This device is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in a JEDEC standard BGA package
Product Family
• Dual Power Supply for lowest power
1.4 to 2.3 Volts - VCC
1.4 to 3.6 Volts - VCCQ
• Very low standby current
400nA at 2.0V and 37 deg C Maximum
• Very low operating current
0.7mA at 1.8V and 1µs (Typical)
• Low Page Mode operating current
0.5mA at 1.8V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.2V
• Automatic power down to standby mode
• Special Processing to reduce Soft Error Rate
(SER)
• Space saving BGA package available
Part Number Package Type
Operating
Temperature
Power
Supply
(Vcc)/(VccQ)
Speed
Standby
Operating
Current (ISB), Current (Icc),
Max Max
N04M1618L1AB 48 - BGA
N04M1618L1AT 44 - TSOP II
N04M1618L1AD Known Good Die
-40oC to +85oC
1.4V - 2.3V 85ns @ 1.7V
1.4V - 3.6V 150ns @ 1.4V
10 µA
3 mA @ 1MHz
Pin Configuration
A4
A3
A2
A1
A0
CE1#
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O15
I/O14
I/O13
I/O12
WE#
A16
A15
A14
A13
A12
1 PIN
2 ONE
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
123456
44 A5
A43 A6
42 A7
LB# OE# A0 A1 A2 CE2
B41 OE#
40 UB#
I/O8 UB# A3 A4 CE1# I/O0
C39 LB#
38 I/O4
37 I/O5
I/O9 I/O10 A5 A6 I/O1 I/O2
D36 I/O6
35 I/O7
VSS I/O11 A17 A7 I/O3 VCCQ
E34 VSS
33 VCCQ
VCC I/O12 NC A16 I/O4 VSS
32 I/O11
F31 I/O10
30 I/O9
I/O14 I/O13 A14 A15 I/O5 I/O6
G29 I/O8
28 CE2
I/O15 NC A12 A13 WE# I/O7
27 A8
H26 A9
25 A10
NC A8 A9 A10 A11 NC
24 A11
23 A17
48 Pin BGA (top)
6 x 8 mm
Pin Descriptions
Pin Name
A0-A17
WE
CE1, CE2
OE
LB
UB
I/O0-I/O15
VCC
VCCQ
VSS
NC
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Input/Output Power
Ground
Not Connected
Stock No. 23209-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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N04M1618L1A pdf, ピン配列
NanoAmp Solutions, Inc.
N04M1618L1Awww.DataSheet4U.com
Absolute Maximum Ratings1
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
VIN,OUT
VCC
PD
TSTG
TA
TSOLDER
–0.3 to VCC+0.3
–0.3 to 4.5
500
–40 to 125
-40 to +85
240oC, 10sec(Lead only)
V
V
mW
oC
oC
oC
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item
Symbol
Test Conditions
Min.
Typ1
Max Unit
Core Supply Voltage
I/O Supply Voltage
Data Retention Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Read/Write Operating Supply Current
@ 1 µs Cycle Time2
Read/Write Operating Supply Current
@ 85 ns Cycle Time2
Page Mode Operating Supply Current
@ 85 ns Cycle Time2 (Refer to Power
Savings with Page Mode Operation
diagram)
VCC
VCCQ
VDR
VIH
VIL
VOH
VOL
ILI
ILO
ICC1
ICC2
ICC3
Read/Write Quiescent Operating Sup-
ply Current3
ICC4
Standby Current3
ISB1
Data Retention Current3
IDR
1.4
VCCQ > or = VCC
1.4
Chip Disabled3
1.2
VCCQ-0.6
–0.3
IOH = 0.2mA
IOL = -0.2mA
VCCQ–0.2
VIN = 0 to VCC
OE = VIH or Chip Disabled
VCC=2.3 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
VCC=2.3 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
1.8
1.8
1.5
10.0
2.3 V
3.6 V
V
VCCQ+0.3 V
0.6 V
V
0.2 V
0.1 µA
0.1 µA
2.5 mA
13.0 mA
VCC=2.3 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
3.5
mA
VCC=2.3 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0,
f=0
VIN = VCC or 0V
Chip Disabled
tA= 85oC, VCC = 2.3 V
VCC = 1.8V, VIN = VCC or 0
Chip Disabled, tA= 85oC
0.2 µA
0.2 20.0 µA
0.1 1.0 µA
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
3. This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all
inputs must be within 0.2 volts of either VCC or VSS.
Stock No. 23209-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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N04M1618L1A 電子部品, 半導体
NanoAmp Solutions, Inc.
N04M1618L1Awww.DataSheet4U.com
Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH)
tRC
Address
tAA
tOH
Data Out
Previous Data Valid
Timing Waveform of Read Cycle (WE=VIH)
tRC
Address
tAA
CE1#
CE2
OE#
LB#, UB#
Data Out
tCO
tLZ(2)
tOE
tOLZ
tLBLZ, tUBLZ
High-Z
tLB, tUB
Data Valid
tHZ(1,2)
tOHZ(1)
tLBHZ, tUBHZ
Data Valid
Stock No. 23209-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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部品番号部品説明メーカ
N04M1618L1A

4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit

NanoAmp Solutions
NanoAmp Solutions


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