Datasheet SP886 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	SP886	DECT RF Filters Sichuan Institute of Piezoelectric and Acoustooptic Technology For DECT RF Filters (F-11 Package) SP886 Electrical Characteristic: Characteristic Nominal Center Frequency 1dB Bandwidth(from f0) Stop Band Attenuation (from peak level) at F0±45MHz Insertion Loss(at F0±1.2MHz) I	SIPAT	filter
2	SP8861	13GHz Low Power Single-Chip Frequency Synthesiser SP8861 1·3GHz Low Power Single-Chip Frequency Synthesiser Supersedes version in the1996 Professional Products IC Handbook, HB2480 - 3.0 DS3640 - 4.0 April 1998 The SP8861 is a low power single chip synthesiser intended for professional radio applications, containing all the elements (apart from th	Mitel Networks	data
3	SP8861	Low Power Single-Chip Frequency Synthesiser SP8861 1·3GHz Low Power Single-Chip Frequency Synthesiser Supersedes version in the1996 Professional Products IC Handbook, HB2480 - 3.0 DS3640 - 4.0 April 1998 The SP8861 is a low power single chip synthesiser intended for professional radio applications, containing all the elements (apart from th	Zarlink Semiconductor	data
4	SP8861HP	13GHz Low Power Single-Chip Frequency Synthesiser SP8861 1·3GHz Low Power Single-Chip Frequency Synthesiser Supersedes version in the1996 Professional Products IC Handbook, HB2480 - 3.0 DS3640 - 4.0 April 1998 The SP8861 is a low power single chip synthesiser intended for professional radio applications, containing all the elements (apart from th	Mitel Networks	data
5	SP8861NAHP	13GHz Low Power Single-Chip Frequency Synthesiser SP8861 1·3GHz Low Power Single-Chip Frequency Synthesiser Supersedes version in the1996 Professional Products IC Handbook, HB2480 - 3.0 DS3640 - 4.0 April 1998 The SP8861 is a low power single chip synthesiser intended for professional radio applications, containing all the elements (apart from th	Mitel Networks	data

SP8 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	SP80001	800MHz Low-loss SAW Filter 53MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute 800MHz Low-loss SAW Filter 53MHz Bandwidth Part Number: SP80001 www.sipatsaw.com SIPAT Co., Ltd. Specifications Parameter Center Frequency Insertion Loss 1 dB Bandwidth 3 dB Bandwidth 35 dB Bandwidth Pass	SIPAT	filter
2	SP8005	N-Channel Enhancement Mode Field Effect Transistor Green Product SP8005 Ver 2.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 3.5 @ VGS=4.5V 3.7 @ VGS=4.0V 20V 32A 3.9 @ VGS=3.7V 4.3 @ VGS=3.1V 5.0 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON).	SamHop Microelectronics	transistor
3	SP8006	N-Channel Enhancement Mode Field Effect Transistor Green Product SP8006 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 4.5 @ VGS=4.5V 4.7 @ VGS=4.0V 24V 12.5A 4.9 @ VGS=3.7V 5.5 @ VGS=3.1V 6.0 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON	SamHop Microelectronics	transistor
4	SP8007	N-Channel Enhancement Mode Field Effect Transistor Green Product SP8007 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 3.8 @ VGS=4.5V 3.9 @ VGS=4.0V 24V 27A 4.6 @ VGS=3.7V 5.1 @ VGS=3.1V 5.9 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON).	SamHop Microelectronics	transistor
5	SP8008	N-Channel Enhancement Mode Field Effect Transistor Green Product SP8008 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Typ 3.9 @ VGS=10V 30V 28A 4.2 @ VGS=4.5V 5.2 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mo	SamHop Microelectronics	transistor
6	SP8009	N-Channel Enhancement Mode Field Effect Transistor Green Product SP8009 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 30V ID 24A R DS(ON) (m Ω) Typ 6.0 @ VGS=10V 7.2 @ VGS=6V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. P	SamHop Microelectronics	transistor
7	SP8009E	N-Channel Enhancement Mode Field Effect Transistor Green Product SP8009E Ver 1.5 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 33V ID 24A R DS(ON) (m Ω) Typ 5.0 @ VGS=10V 6.5 @ VGS=6V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. E	SamHop Microelectronics	transistor
8	SP8009EL	N-Channel Enhancement Mode Field Effect Transistor Green Product SP8009EL Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 33V ID 24A R DS(ON) (m Ω) Typ 5.0 @ VGS=10V 6.5 @ VGS=6V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.	SamHop Microelectronics	transistor
9	SP800L	Low Power Microprocessor Supervisory with Battery Switch-Over ® SP691A/693A/800L/800M Low Power Microprocessor Supervisory with Battery Switch-Over FEATURES ■ Precision 4.65V/4.40V Voltage Monitoring ■ 200ms Or Adjustable Reset Time ■ 100ms, 1.6s Or Adjustable Watchdog Time ■ 60µA Maximum Operating Supply Current ■ 2.0µA Maximum Battery Backup C	Sipex	battery

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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