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VSLB3940 の電気的特性と機能

VSLB3940のメーカーはVishay Siliconixです、この部品の機能は「High Speed Infrared Emitting Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 VSLB3940
部品説明 High Speed Infrared Emitting Diode
メーカ Vishay Siliconix
ロゴ Vishay Siliconix ロゴ 




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VSLB3940 Datasheet, VSLB3940 PDF,ピン配置, 機能
VSLB3940
Vishay Semiconductors
www.DataSheet4U.com
High Speed Infrared Emitting Diode, RoHS Compliant, 940 nm,
GaAlAs, DDH
94 8636
DESCRIPTION
VSLB3940 is a high speed infrared emitting diode in GaAlAs,
DDH technology, molded in a clear plastic package.
FEATURES
• Package type: leaded
• Package form: T-1, clear epoxy
• Dimensions: Ø 3 mm
• Peak wavelength: λp = 940 nm
• High speed
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
APPLICATIONS
• Infrared remote control units
PRODUCT SUMMARY
COMPONENT
VSLB3940
Ie (mW/sr)
65
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
VSLB3940
Note
MOQ: minimum order quantity
PACKAGING
Bulk
ϕ (deg)
± 22
λp (nm)
940
REMARKS
MOQ: 5000 pcs, 5000 pcs/bulk
tr (ns)
15
PACKAGE FORM
T-1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.1, tp = 100 µs
tp = 100 µs
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t 5 s, 2 mm from case
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB
Note
Tamb = 25 °C, unless otherwise specified
SYMBOL
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
VALUE
5
100
1.0
1.5
160
100
- 25 to + 85
- 40 to + 100
260
300
UNIT
V
mA
A
A
mW
°C
°C
°C
°C
K/W
www.vishay.com
288
For technical questions, contact: [email protected]
Document Number: 81931
Rev. 1.0, 30-Sep-08

1 Page





VSLB3940 pdf, ピン配列
VSLB3940
Vishay Semiconductors
High Speed Infrared Emitting Diode,
RoHS Compliant, 940 nm, GaAlAs, DDH
www.DataSheet4U.com
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
1000
100
10
tp = 100 µs
tp/T= 0.001
21534
1
0
12
VF - Forward Voltage (V)
3
Fig. 3 - Forward Current vs. Forward Voltage
180
IF = 1 mA
160
140
120
IF = 100 mA
100
80
60
tp = 20 ms
40
- 60 - 40 - 20
0
20 40 60 80 100
21444
Tamb - Ambient Temperature (°C)
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
110
108
106
104
102
100
98
96 tp = 20 ms
94
92
90
- 40 - 20 0
IF = 100 mA
IF = 10 mA
IF = 1 mA
20 40 60 80 100
21443
Tamb - Ambient Temperature (°C)
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
1000
100
10
tp = 100 µs
tp/T= 0.001
21442
1
10
100
IF - Forward Current (mA)
1000
Fig. 5 - Radiant Intensity vs. Forward Current
100
90
80 IF = 30 mA
70
60
50
40
30
20
10
0
840 880 920 960 1000
21445
λ - Wavelength (nm)
1040
Fig. 7 - Relative Radiant Power vs. Wavelength
0° 10° 20°
30°
1.0
0.9
0.8
0.7
21441
0.6 0.4 0.2
0
40°
50°
60°
70°
8
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
www.vishay.com
290
For technical questions, contact: [email protected]
Document Number: 81931
Rev. 1.0, 30-Sep-08


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部品番号部品説明メーカ
VSLB3940

High Speed Infrared Emitting Diode

Vishay Siliconix
Vishay Siliconix


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