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PDF GA50TS120K Data sheet ( Hoja de datos )
| Número de pieza | GA50TS120K | |
| Descripción | Short Circuit Rated Ultra-FastTM Speed IGBT | |
| Fabricantes | XIAN | |
| Logotipo |  |
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PRELIMINARY GA50TS120K
]HALF-BRODGE IGBT INT-A -PAK
Short Circuit Rated
Ultra-FastTM Speed IGBT
Features
• Generation 5 IGBT NPT technology
• UltraFast optimized high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode.
• Very low conduction and switching losses
• HEXFRED TM antiparallel diodes with ultra-soft
recovery
• Industry standard package
• UL recongnition pending
• Short circuit rated 10 µs
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding,Mortor Control
• Lower EMI, requries less snubbing
VCES=1200V
VCE(on) typ.=2.5V
@VGE=15V,IC=50A
Absolute Maximum Ratings
Parameter
VCES
IC @ Tc=25oC
Collector- to- Emitter Voltage
Continuous Collector Current
IC @ Tc=85oC
Continuous Collector Current
ICM Pulsed collector Current
ILM Peak switching Current
IFM Peak Diode Forward Current
VGE Gate- to- Emitter Voltage
VISOL
RMS Isolation Voltage, Any Terminal To Case, t =1 min
PD @ TC =25oC
PD @ TC =85oC
TJ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
TSTG
Storage Temperature Range
Max.
1200
75
50
100
100
100
±20
2500
417
217
-40 to +150
-40 to +125
Units
V
A
V
W
Co
Termal / Mechanical Characteristics
Parameter
RθJC Termal Resistance, Junction-to- Case- IBGT
RθJC Termal Resistance, Junction-to- Case- Diode
RθCS Termal Resistance, Csar-to- Sink- Module
Mouting Torque, Case-to-Heatsink
Mouting Torque, Case-to-Terminal 1,2 & 3
Weight of Module
1
Typ.
-
-
0.1
-
-
200
Max.
0.30
0.70
-
4.0
3.0
-
Units
oC/W
N.m
g
1 page | ||
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| PDF Descargar | [ Datasheet GA50TS120K.PDF ] | |
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