|
|
Número de pieza | EID1718A1-4 | |
Descripción | 17.3-18.1 GHz 4-Watt Internally-Matched Power FET | |
Fabricantes | Excelics Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EID1718A1-4 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! UPDATED: 07/12/2007
www.DataSheet4U.com
EID1718A1-4
17.3–18.1 GHz 4-Watt Internally-Matched Power FET
FEATURES
• 17.3-18.1 GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +36.0 dBm Output Power at 1dB Compression
• 6.0 dB Power Gain at 1dB Compression
• 25% Power Added Efficiency
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
.060 MIN.
.650±.008 .512
GATE
Excelics
EID1718A1-4
YYWW
.060 MIN.
DRAIN
.022
.319
SN
.094
.382
.045
.004 .070 ±.008
.129
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
G1dB
∆G
PAE
Id1dB
IDSS
VP
RTH
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression
f = 17.3-18.1GHz
VDS = 10 V, IDSQ ≈ 1200mA
Gain at 1dB Compression
f = 17.3-18.1GHz
VDS = 10 V, IDSQ ≈ 1200mA
Gain Flatness
f = 17.3-18.1GHz
VDS = 10 V, IDSQ ≈ 1200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 1200mA
f = 17.3-18.1GHz
Drain Current at 1dB Compression
f = 17.3-18.1GHz
Saturated Drain Current
VDS = 3 V, VGS = 0 V
Pinch-off Voltage
Thermal Resistance2
VDS = 3 V, IDS = 20 mA
Caution! ESD sensitive device.
MIN TYP MAX UNITS
35.5 36.0
dBm
5.0 6.0
dB
±0.6 dB
25 %
1300
2080
-2.5
4.5
1800
2880
-4.0
5.5
mA
mA
V
oC/W
Notes: 1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS
VGS
IDS
IGSF
PIN
PT
TCH
TSTG
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Input Power
Total Power Dissipation
Channel Temperature
Storage Temperature
10 V
-4.5 V
IDSS
40 mA
@ 3dB compression
23 W
150°C
-65/+150°C
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised July 2007
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet EID1718A1-4.PDF ] |
Número de pieza | Descripción | Fabricantes |
EID1718A1-4 | 17.3-18.1 GHz 4-Watt Internally-Matched Power FET | Excelics Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |