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PDF VND5E006ASP-E Data sheet ( Hoja de datos )
| Número de pieza | VND5E006ASP-E | |
| Descripción | Double channel high-side driver with analog current sense | |
| Fabricantes | ST Microelectronics | |
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VND5E006ASP-E
Double channel high-side driver with analog current sense
for automotive applications
Features
Max transient supply voltage
Operating voltage range
Max on-state resistance (per ch.)
Current limitation (typ)
Off-state supply current
VCC 41 V
VCC 4.5 to 28 V
RON 5.5 mΩ
ILIMH
IS
100 A
2 µA(1)
1. Typical value with all loads connected.
■ General
– Inrush current active management by
power limitation
– Very low standby current
– 3.0 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
european directive
– Very low current sense leakage
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide
currents range
– Current sense disable
– Off-state openload detection
– Output short to VCC detection
– Overload and short to ground (power
limitation) indication
– Thermal shutdown indication
■ Protections
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
of VCC
– Overtemperature shutdown with auto
restart (thermal shutdown)
PowerSO-16
– Reverse battery protected with self switch
of the PowerMOS (see Figure 32)
– Electrostatic discharge protection
Applications
■ All types of resistive, inductive and capacitive
loads
Description
The VND5E006ASP-E is a double channel
high-side driver manufactured in the ST
proprietary VIPower™ M0-5 technology and
housed in the tiny PowerSO-16 package. The
VND5E006ASP-E is designed to drive 12 V
automotive grounded loads delivering protection,
diagnostics and easy 3 V and 5 V CMOS
compatible interface with any microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, overtemperature shut-off with auto
restart and overvoltage active clamp. A dedicated
analog current sense pin is associated with every
output channel in order to provide enhanced
diagnostic functions including fast detection of
overload and short-circuit to ground through
power limitation indication, overtemperature
indication, short-circuit to VCC diagnosis and
ON-state and OFF-state open-load detection. The
current sensing and diagnostic feedback of the
whole device can be disabled by pulling the
CS_DIS pin high to allow sharing of the external
sense resistor with other similar devices.
May 2010
Doc ID 17362 Rev 1
1/36
www.st.com
1
1 page  
VND5E006ASP-E
www.DataSheet4U.com
Block diagram and pin description
1 Block diagram and pin description
Figure 1. Block diagram
Signal Clamp
Undervoltage
IN1
IN2
Control & Diagnostic 2
Control & Diagnostic 1
Power
Clamp
DRIVER
Over
temp.
Current
Limitation
VON
Limitation
CS_
DIS
CS1
CS2
LOGIC
VSENSEH
Fault
Current
Sense
OVERLOAD PROTECTION
(ACTIVE POWER LIMITATION)
Reverse
Battery
Protection
VCC
CH 1
CH 2
GND
OUT2
OUT1
Table 1. Pin function
Name
Function
VCC
OUTn
GND
INn
CSn
CS_DIS
Battery connection.
Power output.
Ground connection.
Voltage controlled input pin with hysteresis, CMOS compatible. Controls output
switch state.
Analog current sense pin, delivers a current proportional to the load current.
Active high CMOS compatible pin, to disable the current sense pin.
Doc ID 17362 Rev 1
5/36
5 Page 
VND5E006ASP-E
www.DataSheet4U.com
Electrical specifications
Table 9.
Symbol
Current sense (8 V < VCC < 18 V)
Parameter
Test conditions
K0 IOUT/ISENSE
IOUT=5A; VSENSE=0.5V
Tj= -40°C...150°C
K1 IOUT/ISENSE
IOUT=10A; VSENSE=0.5V
Tj=-40°C...150°C
Tj=25°C...150°C
dK1/K1(1)
IOUT=10A; VSENSE= 0.5V;
Current sense ratio drift VCSD=0V;
TJ= -40 °C to 150 °C
K2 IOUT/ISENSE
IOUT=15A; VSENSE=4V
Tj=-40°C...150°C
Tj=25°C...150°C
dK2/K2(1)
IOUT=15A; VSENSE= 4V;
Current sense ratio drift VCSD= 0V;
TJ= -40 °C to 150 °C
K3 IOUT/ISENSE
IOUT= 25A; VSENSE=4V
Tj=-40°C...150°C
Tj=25°C...150°C
dK3/K3(1)
IOUT= 25A; VSENSE= 4V;
Current sense ratio drift VCSD= 0V;
TJ= -40 °C to 150 °C
IOUT=0A; VSENSE=0V;
VCSD=5V; VIN=0V;
Tj=-40°C...150°C
ISENSE0
Analog sense leakage
current
VCSD=0V; VIN=5V;
Tj=-40°C...150°C
VSENSE
Max analog sense
output voltage
Analog sense output
VSENSEH(2) voltage in fault
conditions
Analog sense output
ISENSEH(2) current in fault
conditions
Delay response time
tDSENSE1H from falling edge of
CS_DIS pin
IOUT=10A; VSENSE=0V;
VCSD=VIN=5V;
IOUT= 25A; VCSD=0V
VCC=13V; RSENSE=10KΩ
VCC=13V; VSENSE=5V
VSENSE<4V, 5A<Iout<25A
ISENSE=90% of ISENSE max
(see Figure 4)
Min. Typ. Max. Unit
8300 12640 17600
9200 13220 17300
9602 13220 16703
-13 13 %
9500 13120 16900
10408 13120 15907
-10 10 %
10600 12920 15600
11278 12920 14644
-7 7 %
0 1 µA
0 2 µA
0 1 µA
5V
8V
7 12 mA
50 100 µs
Doc ID 17362 Rev 1
11/36
11 Page | ||
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