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PDF VNQ830A-E Data sheet ( Hoja de datos )
| Número de pieza | VNQ830A-E | |
| Descripción | QUAD CHANNEL HIGH SIDE DRIVER | |
| Fabricantes | ST Microelectronics | |
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VNQ830A-E
QUAD CHANNEL HIGH SIDE DRIVER
Table 1. General Features
Type
RDS(on)
VNQ830A-E
60mΩ (*)
(*) Per each channel
Iout
6A (*)
VCC
36V
s DC SHORT CIRCUIT CURRENT: 6A
s CMOS COMPATIBLE INPUTS
s PROPORTIONAL LOAD CURRENT SENSE
s UNDERVOLTAGE AND OVERVOLTAGE
SHUT-DOWN
s OVERVOLTAGE CLAMP
s THERMAL SHUT-DOWN
s CURRENT LIMITATION
s VERY LOW STAND-BY POWER DISSIPATION
s PROTECTION AGAINST:
LOSS OF GROUND AND LOSS OF VCC
s REVERSE BATTERY PROTECTION (**)
s IN COMPLIANCE WITH THE 2002/95/EC
EUROPEAN DIRECTIVE
Figure 1. Package
TARGET SPECIFICATION
SO-28 (DOUBLE ISLAND)
DESCRIPTION
The VNQ830A-E is a quad HSD formed by
assembling two VND830A-E chips in the same
SO-28 package. The VND830A-E is a monolithic
device designed in| STMicroelectronics VIPower
M0-3 Technology. The VNQ830A-E is intended for
driving any type of multiple loads with one side
connected to ground. This device has four
independent channels and four analog sense
outputs which deliver currents proportional to the
outputs currents.
Active current limitation combined with thermal
shut-down and automatic restart protect the
device against overload. Device automatically
turns off in case of ground pin disconnection.
Table 2. Order Codes
Package
SO-28
VNQ830A-E
Tube
Tape and Reel
VNQ830ATR-E
Note: (**) See application schematic at page 10
Rev. 1
September 2004
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
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ELECTRICAL CHARACTERISTICS
(8V<VCC<36V; -40°C< Tj <150°C, unless otherwise specified)
(Per each channel)
Table 5. Power Output
Symbol
Parameter
Test Conditions
VCC (**) Operating Supply Voltage
VUSD (**) Undervoltage Shut-down
VOV (**) Overvoltage Shut-down
RON
Vclamp
On State Resistance
Clamp voltage
IOUT =2A; Tj=25°C
IOUT =2A; Tj=150°C
ICC=20 mA (see note 1)
IS (**) Supply Current
Off State; VCC=13V; VIN=VOUT=0V
Off State; VCC=13V; VIN=VOUT=0V;
Tj =25°C
On State; VIN=5V; VCC=13V; IOUT=0A;
RSENSE=3.9KΩ
IL(off1) Off State Output Current VIN=VOUT=0V
IL(off3) Off State Output Current VIN=VOUT=0V; VCC=13V; Tj =125°C
IL(off4) Off State Output Current VIN=VOUT=0V; VCC=13V; Tj =25°C
Note: (**) Per island
Note: 1. Vclamp and VOV are correlated. Typical difference is 5V
Table 6. Protection (Per each channel) (see note 2)
Symbol
Ilim
TTSD
TR
THYST
Vdemag
VON
Parameter
Current limitation
Thermal shut-down
temperature
Thermal reset temperature
Thermal hysteresis
Turn-off output voltage
clamp
Output voltage drop
limitation
Test Conditions
VCC=13V
5.5V<VCC<36V
IOUT=2A; VIN=0V; L=6mH
IOUT=10mA
Min.
5.5
3
36
41
0
Typ.
13
4
48
12
12
Max.
36
5.5
60
120
55
40
25
7
50
5
3
Min Typ Max
6 9 15
15
150 175 200
135
7 15
VCC-41 VCC-48 VCC-55
50
Unit
V
V
V
mΩ
mΩ
V
µA
µA
mA
µA
µA
µA
Unit
A
A
°C
°C
°C
V
mV
Note: 2. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be
used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration
and number of activation cycles
Table 7. Switching (Per each channel) (VCC=13V)
Symbol
td(on)
Parameter
Turn-on Delay Time
td(off)
Turn-off Delay Time
dVOUT/dt(on) Turn-on Voltage Slope
dVOUT/dt(off) Turn-off Voltage Slope
Test Conditions
RL=6.5Ω from VIN rising edge to
VOUT=1.3V
RL=6.5Ω from VIN falling edge to
VOUT=11.7V
RL=6.5Ω from VOUT=1.3V to
VOUT=10.4V
RL=6.5Ω from VOUT=11.7V to
VOUT=1.3V
Min Typ
30
Max Unit
µs
30 µs
0.40 V/µs
0.40 V/µs
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.µC I/Os PROTECTION:
If a ground protection network is used and negative
transients are present on the VCC line, the control pins will
be pulled negative. ST suggests to insert a resistor (Rprot)
in line to prevent the µC I/Os pins to latch-up.
The value of these resistors is a compromise between the
leakage current of µC and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up
limit of µC I/Os.
-VCCpeak/Ilatchup ≤ Rprot ≤ (VOHµC-VIH-VGND) / IIHmax
Calculation example:
For VCCpeak= - 100V and Ilatchup ≥ 20mA; VOHµC ≥ 4.5V
5kΩ ≤ Rprot ≤ 65kΩ.
Recommended Rprot value is 10kΩ
11/17
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