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STB7720L の電気的特性と機能

STB7720LのメーカーはST Microelectronicsです、この部品の機能は「2.4-2.5 GHz Silicon Linear Power Amplifier IC」です。


製品の詳細 ( Datasheet PDF )

部品番号 STB7720L
部品説明 2.4-2.5 GHz Silicon Linear Power Amplifier IC
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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STB7720L Datasheet, STB7720L PDF,ピン配置, 機能
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STB7720L
2.4-2.5 GHz Silicon Linear Power Amplifier IC
FEATURES SUMMARY
EXCELLENT LINEARITY EVM 2% @ 19dBm (WITH
802.11g OFDM 54Mb/s MODULATION)
VERY LOW QUIESCENT CURRENT (60mA)
INTEGRATED LINEAR ANALOG CONTROL FOR
DC CURRENT AND OUTPUT MANAGEMENT
INTEGRATED AVERAGE CHANNEL POWER
DETECTOR
LEADLESS PACKAGE (3mmx3mm LEAD FREE)
Figure 1. Package
PRELIMINARY DATA
QFN16L (3x3)
APPLICATIONS
OPTIMIZED FOR USE IN 802.11 b/g
DESCRIPTION
The STB7720L, manufactured in the third generation of ST proprietary pure Si bipolar process, is a
three-stage linear power amplifier (PA) optimized for 802.11b/g wireless LAN (WLAN) applications in the
2.4GHz ISM band. It features 32dB of power gain and delivers 19dBm of linear output power with an EVM
degradation of only 2% under 802.11g Modulation (54Mbps).
The current consumption is as low as 125mA at 19dBm make the STB7720L a good solution for mobile
applications. It achieves less than -40dBc firstside lobe suppression and less than -52dBc secondside
lobe suppression under 802.11b modulation (11Mbps).
The device embeds a Linear Analog Control for DC current and output management and a Proprietary
Average Channel Power Detector solution. This power detector has 20dB dynamic range with 1 voltage
range and ±0.3dB accuracy under 2:1 load mismatch. It provides a buffered DC voltage proportional to
the average channel output power. Thanks to this solution we save cost and space by removing a coupler,
an op amp (usually required in a power down function) and also an integrator.
The SBT7720 is housed in QFN 3mmx3mm Leadless package.
Table 1. Order Codes
Order Codes
STB7720
Marking
7720
Package
QFN16L (3x3)
Packaging
Tape & Reel
Table 2. Absolute Maximum Ratings (Tamb = 25 oC)
Symbol
Parameter
Vcc Supply voltage
Tstb Storage temperature
Ta Operating Ambient Temperature
Pin Input Power
Table 3. Thermal Data
Rth(j-case)
Thermal Resistance Junction-Case
August 2004
Value
5.5
-55 to + 150
-30 + 85
10
Unit
V
oC
oC
dBm
TBD
REV. 1
oC/W
1/8

1 Page





STB7720L pdf, ピン配列
STB7720L
Table 5. Electrical Characteristics (Tamd = 25 oC, Vcc=3.3V, f=2.45GHz, Vcnt = 2.9V)
Symbol
Parameter
Test Conditions
Min. Typ.
f Frequency
2.4 2.45
Vcc Supply Voltage
3.0 3.3
Icc(1)
Current Consumption
Pout = 19 dBm
125
Gp Power Gain
32
P1dB
P1dB Compression
25
Gain variation over
Frequency
-/+ 0.5
Gain variation over
Temperature
-/+ 0.5
Quiescent Current
60
EVM(1) Error Vector Magnitude
Pout = 19 dBm
2
ACPR(2)
Adiacent Channel
Power Ratio
Pout = 19dBm, 1st Side Lobe
Pout = 19dBm, 2nd Side Lobe
-40
-52
Vdet
Output Detector Voltage
Range
1
Output Detector Voltage
Response Time
2nd to 5th Harmonics
Spurious (stability)(3)
Load VSWR 10:1
-65
Turn On Time(4)
0.5
Notes:
(1) Parameter measured with RF modulation based on IEEE 802.11g standard (OFDM 54Mbps)
(2) Parameter measured with RF modulation based on IEEE 802.11b standard (CCK 11Mbps)
(3) Load VSWR is set to 10:1 and the angle is varied 360 degrees. Pout = -30 dBm to P1dB
(4) Measured from Device On signal turn on to the point where RF Pout stabilizes to 0.5dB
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Max.
2.5
3.6
Unit
GHz
V
mA
dB
dBm
dB
dB
mA
%
dBc
dBc
V
4 µs
-40 dBc
dBc
µs
3/8


3Pages


STB7720L 電子部品, 半導体
STB7720L
PACKAGE MECHANICAL
Table 6. Mechanical Data - Leadless PACKAGE Exposed Pad (3mm x 3mm)
DIM.
A
A1
MIN.
0.80
0
mm
TYP.
0.90
0.02
A3
b 0.18
0.20 REF
0.23
D
D2 1.30
E
3.00 BSC
1.45
3.00 BSC
E2 1.30
e
L 0.30
1.45
0.50 BSC
0.40
N 16
ND 4
NE 4
Figure 11. Package Dimensions
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MAX
1.00
0.05
0.30
1.55
1.55
0.50
6/8

6 Page



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部品番号部品説明メーカ
STB7720L

2.4-2.5 GHz Silicon Linear Power Amplifier IC

ST Microelectronics
ST Microelectronics


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