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PDF SPD06N60C3 Data sheet ( Hoja de datos )
| Número de pieza | SPD06N60C3 | |
| Descripción | CoolMOS Power Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• High peak current capability
• Ultra low effective capacitances
• Extreme dv /dt rated
www.DataSheet4U.com
• Improved transconductance
Product Summary
V DS @ T j,max
R DS(on),max
ID
SPD06N60C3
650 V
0.75 Ω
6.2 A
PG-TO252
Type
SPD06N60C3
Package
PG-TO252
Ordering Code
Q67040-S4630
Marking
06N60C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Pulsed drain current1)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
1),2)
AR
Avalanche
current,
repetitive
t
1)
AR
Symbol Conditions
I D T C=25 °C
T C=100 °C
I D,pulse T C=25 °C
E AS I D=3.1 A, V DD=50 V
E AR I D=6.2 A, V DD=50 V
I AR
Drain source voltage slope
dv /dt
I D=6.2 A, V DS=480 V,
T j=125 °C
Gate source voltage
Power dissipation
Operating and storage temperature
Reverse diode dv/dt 7)
V GS static
V GS AC (f >1 Hz)
P tot T C=25 °C
T j, T stg
dv/dt
Rev. 1.4
Page 1
Value
6.2
3.9
18.6
200
0.5
6.2
Unit
A
mJ
A
50 V/ns
±20
±30
74
-55 ... 150
15
V
W
°C
V/ns
2005-10-05
1 page  
1 Power dissipation
P tot=f(T C)
80
60
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40
20
2 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
limited by on-state
resistance
101
100 DC
10-1
SPD06N60C3
1 µs
10 µs
100 µs
1 ms
10 ms
0
0 40 80 120
T C [°C]
3 Max. transient thermal impedance
I D=f(V DS); T j=25 °C
parameter: D=t p/T
101
100 0.5
0.2
0.1
10-1
0.05
0.02
0.01 single pulse
10-2
160 100
101 102
V DS [V]
4 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
20
16
103
20 V
7V
6.5 V
12
6V
8
5.5 V
4 5V
10-2
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
0
0
Rev. 1.4
Page 5
4.5 V
4V
5 10 15
V DS [V]
20
2005-10-05
5 Page 
SPD06N60C3
Published by
Infineon Technologies AG
81726 München
Germany
© Infineon Technologies AG 2006
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
www.DaTtaeSrmheseto4fUd.ceolimvery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.4
Page 11
2005-10-05
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet SPD06N60C3.PDF ] | |
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