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FGA40N60UFDのメーカーはFairchild Semiconductorです、この部品の機能は「Ultrafast IGBT」です。 |
部品番号 | FGA40N60UFD |
| |
部品説明 | Ultrafast IGBT | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFGA40N60UFDダウンロード(pdfファイル)リンクがあります。 Total 8 pages
FGA40N60UFD
Ultrafast IGBT
IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
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Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 50ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
GC E
TO-3P
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
FGA40N60UFD
600
± 20
40
20
160
15
160
160
64
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.77
1.7
40
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FGA40N60UFD Rev. A
1 Page 160
Common Emitter
Tc = 25℃
120
80
40
20V
15V
12V
V = 10V
GE
0
0246
Collector-Emitter Voltage,V (V)
CE
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Fig 1. Typical Output Characteristics
8
4
Common Emitter
Vge=15V
3
2
1
40A
20A
Ic=10A
0
0 30 60 90 120 150
Case Temperature, TC [℃]
Fig. 1 Fig3.Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Common Emitter
T = 25℃
C
16
12
8
40A
4 20A
IC = 10A
0
0 4 8 12 16
Gate - Emitter Voltage, V [V]
GE
Fig 5. Saturation Voltage vs. VGE
20
©2003 Fairchild Semiconductor Corporation
80
Common Emitter
70 VGE=15V
Tc= 25℃
60 Tc= 125℃
50
40
30
20
10
0
0.5
1
Collector-Emitter Voltage, V (V)
CE
Fig 2. Typical Saturation Voltage
10
30
Vcc = 300V
Load Current : peak of square wave
25
20
15
10
5 Duty cycle : 50%
Tc = 100℃
Powe Dissipation = 32W
0
0.1 1 10
100
Frequency [kHz]
1000
Fig 4. Load Current vs. Frequency
20
Common Emitter
T = 125℃
C
16
12
8
40A
4 20A
Ic=10A
0
0 4 8 12 16
Gate - Emitter Voltage, VGE [V]
Fig 6. Saturation Voltage vs. VGE
20
FGA40N60UFD Rev. A
3Pages T = 25℃
C
T = 100℃
C
100
10
100
VR = 200V
I = 15A
F
TC = 25℃
T = 100℃
C
10
1
012
Forward Voltage Drop, V [V]
F
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Fig 18. Forward Characteristics
3
800
V = 200V
R
I = 15A
F
T = 25℃
C
T = 100℃
600 C
400
200
0
100
di/dt [A/us]
Fig 20. Stored Charge
1000
1
100
di/dt [A/us]
Fig 19. Reverse Recovery Current
1000
120
VR = 200V
IF = 15A
T = 25℃
C
100 TC = 100℃
80
60
40
20
100
di/dt [A/us]
Fig 21. Reverse Recovery Time
1000
©2003 Fairchild Semiconductor Corporation
FGA40N60UFD Rev. A
6 Page | |||
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部品番号 | 部品説明 | メーカ |
FGA40N60UFD | Ultrafast IGBT | Fairchild Semiconductor |