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GB5B120KDのメーカーはInternational Rectifierです、この部品の機能は「 IRGB5B120KD」です。 |
部品番号 | GB5B120KD |
| |
部品説明 | IRGB5B120KD | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとGB5B120KDダウンロード(pdfファイル)リンクがあります。 Total 12 pages
PD - 94385E
IRGB5B120KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
www.DataSheet•4UU.lctraosmoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• TO-220 Package.
C
G
E
n-channel
VCES = 1200V
IC = 6.0A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 2.75V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
TO-220AB
Max.
1200
12
6.0
24
24
12
6.0
24
± 20
89
36
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
1.4
2.8
–––
62
–––
Units
°C/W
g (oz)
1
8/18/04
1 Page IRGB5B120KD
14
12
10
8
www.DataSheet4U.com
6
4
2
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
100
80
60
40
20
0
0 50 100 150 200
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
100
10
1
0.1
0.01
1
10 µs
100 µs
DC
1ms
10ms
10 100 1000 10000
VCE (V)
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
www.irf.com
100
10
1
0
10
100 1000
VCE (V)
10000
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
3
3Pages IRGB5B120KD
1200
1000
EON
800
600
www.DataSheet4U.co4m00
EOFF
200
0
0 4 8 12 16 20
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 125°C; L=3.7mH; VCE= 600V
RG= 50Ω; VGE= 15V
1000
tdOFF
100
tF
tR
10
4
6
8 10
IC (A)
tdON
12 14
Fig. 14 - Typ. Switching Time vs. IC
TJ = 125°C; L=3.7mH; VCE= 600V
RG= 50Ω; VGE= 15V
1400
1200
1000
800
600
400
200
0
0
EON
EOFF
100 200 300
RG (Ω)
400
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 125°C; L=3.7mH; VCE= 600V
ICE= 6.0A; VGE= 15V
6
1000
tdOFF
100 tR
tdON
10
0
tF
100 200 300
RG (Ω)
400
Fig. 16 - Typ. Switching Time vs. RG
TJ = 125°C; L=3.7mH; VCE= 600V
ICE= 6.0A; VGE= 15V
www.irf.com
6 Page | |||
ページ | 合計 : 12 ページ | ||
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部品番号 | 部品説明 | メーカ |
GB5B120KD | IRGB5B120KD | International Rectifier |