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Número de pieza | V40100PG | |
Descripción | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
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V40100PG
Vishay Generawl wSwe.DmatiacShoenetd4Uu.ccotmor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.420 V at IF = 5 A
3
2
1
TO-247AD (TO-3P)
PIN 1
PIN 3
PIN 2
CASE
FEATURES
• Trench MOS Schottky Technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, free-wheeling diodes, oring diode, dc-to-dc
converters and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
Tj max.
2 x 20 A
100 V
250 A
0.67 V
150 °C
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: As marked
Mounting Torque: 10 in-lbs Maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified (see Fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load per diode
IFSM
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz
Voltage rate of change (rated VR)
Operating junction and storage temperature range
IRRM
dv/dt
TJ, TSTG
V40100PG
100
40
20
250
1.0
10000
- 40 to + 150
UNIT
V
A
A
A
V/µs
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
at IR = 1.0 mA TJ = 25 °C
V(BR)
100 (minimum)
Instantaneous forward voltage (1) per
diode
at IF = 5 A
IF = 10 A
IF = 20 A
at IF = 5 A
IF = 10 A
IF = 20 A
TJ = 25 °C
TJ = 125 °C
VF
0.490
0.572
0.731
0.42
0.50
0.67
MAX.
-
-
-
0.81
-
-
0.73
UNIT
V
V
Document Number 88972
18-Aug-06
www.vishay.com
1
1 page Notice
Legal Disclaimer Notice
www.DataSheeVt4iUs.choamy
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet V40100PG.PDF ] |
Número de pieza | Descripción | Fabricantes |
V40100P | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay Siliconix |
V40100PG | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay Siliconix |
V40100PGW | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay |
V40100PW | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay |
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