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VF40100C の電気的特性と機能

VF40100CのメーカーはVishay Siliconixです、この部品の機能は「Dual High-Voltage Trench MOS Barrier Schottky Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 VF40100C
部品説明 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
メーカ Vishay Siliconix
ロゴ Vishay Siliconix ロゴ 




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VF40100C Datasheet, VF40100C PDF,ピン配置, 機能
www.vishay.com
VF40100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.38 V at IF = 5 A
TMBS ®
ITO-220AB
VF40100C
123
PIN 1
PIN 2
PIN 3
PRIMARY CHARACTERISTICS
IF(AV)
2 x 20 A
VRRM
100 V
IFSM
250 A
VF at IF = 20 A
0.61 V
TJ max.
150 °C
Package
ITO-220AB
Diode variation
Dual common cathode
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder dip 275 °C max., 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Voltage rate of change (rated VR)
Isolation voltage from terminal to heatsink t = 1 min
Operating junction and storage temperature range
dV/dt
VAC
TJ, TSTG
VF40100C
100
40
20
250
10 000
1500
-40 to +150
UNIT
V
A
A
V/μs
V
°C
Revision: 17-Aug-15
1 Document Number: 89459
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VF40100C pdf, ピン配列
www.vishay.com
100
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8
Instantaneous Forward Voltage (V)
1
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
TA = 150 °C
10 TA = 125 °C
1
0.1
0.01
TA = 100 °C
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
10 000
VF40100C
Vishay General Semiconductor
10
Junction to Case
1
0.1
0.01
V(B,I)40100C
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Diode
100
Junction to Case
10
1
0.1
0.01
VF40100C
0.1 1 10
t - Pulse Duration (s)
100
Fig. 7 - Typical Transient Thermal Impedance Per Diode
1000
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
Revision: 17-Aug-15
3 Document Number: 89459
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


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共有リンク

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