DataSheet.jp

GS8642Z18B の電気的特性と機能

GS8642Z18BのメーカーはGSI Technologyです、この部品の機能は「72Mb Pipelined and Flow Through Synchronous NBT SRAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 GS8642Z18B
部品説明 72Mb Pipelined and Flow Through Synchronous NBT SRAM
メーカ GSI Technology
ロゴ GSI Technology ロゴ 




このページの下部にプレビューとGS8642Z18Bダウンロード(pdfファイル)リンクがあります。

Total 30 pages

No Preview Available !

GS8642Z18B Datasheet, GS8642Z18B PDF,ピン配置, 機能
Product Preview
GS8642Z18(B)/GS8642Zw3w6w(.BDa)/tGaSShe8e6t44U2.cZo7m2(C)
119- & 209-Bump BGA
Commercial Temp
Industrial Temp
72Mb Pipelined and Flow Through
Synchronous NBT SRAM
300 MHz167 MHz
2.5 V or 3.3 V VDD
2.5 V or 3.3 V I/O
Features
• NBT (No Bus Turn Around) functionality allows zero wait
Read-Write-Read bus utilization; fully pin-compatible with
both pipelined and flow through NtRAM™, NoBL™ and
ZBT™ SRAMs
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• User-configurable Pipeline and Flow Through mode
• ZQ mode pin for user-selectable high/low output drive
• IEEE 1149.1 JTAG-compatible Boundary Scan
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2Mb, 4Mb, 8Mb, and 16Mb devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 119- or 209-bump BGA package
• Pb-Free 119- and 209-bump BGA packages available
Functional Description
The GS8642Z18/36/72 is a 72Mbit Synchronous Static
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or
other pipelined read/double late write or flow through read/
single late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Because it is a synchronous device, address, data inputs, and
read/write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8642Z18/36/72 may be configured by the user to
operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, in addition to the rising-edge-
triggered registers that capture input signals, the device
incorporates a rising edge triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge-triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS8642Z18/36/72 is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
standard 119-bump, 165-bump or 209-bump BGA package.
Pipeline
3-1-1-1
Flow Through
2-1-1-1
Parameter Synopsis
-300 -250 -200 -167 Unit
tKQ(x18/x36)
tKQ(x72)
tCycle
Curr (x18)
Curr (x36)
Curr (x72)
tKQ
tCycle
Curr (x18)
Curr (x36)
Curr (x72)
2.3 2.5 3.0 3.5 ns
3.0 3.0 3.0 3.5 ns
3.3 4.0 5.0 6.0 ns
400 340 290 260 mA
480 410 350 305 mA
590 520 435 380 mA
5.5 6.5 7.5 8.0 ns
5.5 6.5 7.5 8.0 ns
285 245 220 210 mA
330 280 250 240 mA
425 370 315 300 mA
Rev: 1.02 5/2005
1/34
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2004, GSI Technology

1 Page





GS8642Z18B pdf, ピン配列
Product Preview
GS8642Z18(B)/GS8642Zw3w6w(.BDa)/tGaSShe8e6t44U2.cZo7m2(C)
GS8642Z72 209-Bump BGA Pin Description
Symbol
A0, A1
An
DQA
DQB
DQC
DQD
DQE
DQF
DQG
DQH
BA, BB
BC,BD
BE, BF, BG,BH
NC
CK
E1
E3
E2
G
ADV
ZZ
FT
LBO
MCH
MCH
MCL
W
Type
I
I
I/O
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
ZQ I
CKE I
Description
Address field LSBs and Address Counter Preset Inputs
Address Inputs
Data Input and Output pins
Byte Write Enable for DQA, DQB I/Os; active low
Byte Write Enable for DQC, DQD I/Os; active low
Byte Write Enable for DQE, DQF, DQG, DQH I/Os; active low
No Connect
Clock Input Signal; active high
Chip Enable; active low
Chip Enable; active low
Chip Enable; active high
Output Enable; active low
Burst address counter advance enable
Sleep Mode control; active high
Flow Through or Pipeline mode; active low
Linear Burst Order mode; active low
Must Connect High
Must Connect High
Must Connect Low
Write Enable; active low
FLXDrive Output Impedance Control
Low = Low Impedance [High Drive],
High = High Impedance [Low Drive]
Clock Enable; active low
Rev: 1.02 5/2005
3/34
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2004, GSI Technology


3Pages


GS8642Z18B 電子部品, 半導体
Product Preview
GS8642Z18(B)/GS8642Zw3w6w(.BDa)/tGaSShe8e6t44U2.cZo7m2(C)
GS8642Z18B Pad Out–119-Bump BGA—Top View
1234567
A VDDQ A A A A A VDDQ A
B NC E2 A ADV A E3 NC B
C NC A
A VDD A
A NC C
D DQB NC VSS ZQ VSS DQPA NC
D
E NC DQB VSS E1 VSS NC DQA E
F
VDDQ
NC
VSS
G
VSS
DQA
VDDQ
F
G NC DQB BB A NC NC DQA G
H DQB NC VSS W VSS DQA NC
H
J
VDDQ
VDD
NC
VDD
NC
VDD VDDQ
J
K NC DQB VSS CK VSS NC DQA K
L DQB NC NC NC BA DQA NC
L
M
VDDQ
DQB
VSS
CKE
VSS
NC VDDQ
M
N DQB NC VSS A1 VSS DQA NC
N
P NC DQPB VSS A0 VSS NC DQA P
R NC A LBO VDD FT A NC R
T A A A A A A ZZ T
U
VDDQ
TMS
TDI
TCK
TDO
NC VDDQ
U
7 x 17 Bump BGA—14 x 22 mm2 Body—1.27 mm Bump Pitch
Rev: 1.02 5/2005
6/34
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2004, GSI Technology

6 Page



ページ 合計 : 30 ページ
 
PDF
ダウンロード
[ GS8642Z18B データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
GS8642Z18

72Mb Pipelined and Flow Through Synchronous NBT SRAM

GSI Technology
GSI Technology
GS8642Z18B

72Mb Pipelined and Flow Through Synchronous NBT SRAM

GSI Technology
GSI Technology


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap