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PDF STD60NF55LA Data sheet ( Hoja de datos )

Número de pieza STD60NF55LA
Descripción N-channel 55V - 0.012 - 60A - DPAK STripFET II Power MOSFET
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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STD60NF55LA
N-channel 55V - 0.012- 60A - DPAK
STripFET™ II Power MOSFET
General features
Type
STD60NF55LA
VDSS
55V
Low threshold drive
RDS(on)
<0.015
ID
60A
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size™”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
Switching application
3
1
DPAK
Internal schematic diagram
Order codes
Part number
STD60NF55LAT4
Marking
D60NF55LA
Package
DPAK
Packaging
Tape & reel
September 2006
Rev 2
1/14
www.st.com
14

1 page




STD60NF55LA pdf
STD60NF55LA
Electricwawl cwh.DaaratacStheereist4tUic.csom
Table 5. Source drain diode
Symbol
Parameter
Test conditions
Min.
ISD
ISDM (1)
Source-drain current
Source-drain current
(pulsed)
VSD (2) Forward on voltage
ISD = 60A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time ISD = 40A, di/dt = 100A/µs,
Reverse recovery charge VDD = 25V, Tj = 150°C
Reverse recovery current (see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Typ.
65
130
4
Max. Unit
60 A
240 A
1.3 V
ns
nC
A
5/14

5 Page





STD60NF55LA arduino
STD60NF55LA
Packagewmwwec.DhaatanSicheael td4Ua.tcaom
DIM.
A
A1
A2
B
b4
C
C2
D
D1
E
E1
e
e1
H
L
(L1)
L2
L4
R
V2
MIN.
2.2
0.9
0.03
0.64
5.2
0.45
0.48
6
6.4
4.4
9.35
1
0.6
DPAK MECHANICAL DATA
mm.
TYP
5.1
4.7
2.28
2.8
0.8
0.2
MAX.
2.4
1.1
0.23
0.9
5.4
0.6
0.6
6.2
6.6
4.6
10.1
1
MIN.
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.368
0.039
0.023
inch
TYP.
0.200
0.185
0.090
0.110
0.031
0.008
MAX.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.260
0.181
0.397
0.039
0068772-F
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