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PDF VNQ600P-E Data sheet ( Hoja de datos )
| Número de pieza | VNQ600P-E | |
| Descripción | QUAD CHANNEL HIGH SIDE DRIVER | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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VNQ600P-E
QUAD CHANNEL HIGH SIDE DRIVER
Table 1. General Features
TYPE
RDS(on) (*)
VNQ600P-E
35mΩ
Ilim
25A
VCC
36 V
(*) Per each channel
s DC SHORT CIRCUIT CURRENT: 22A
s CMOS COMPATIBLE INPUTS
s PROPORTIONAL LOAD CURRENT SENSE
s UNDERVOLTAGE & OVERVOLTAGE
SHUT-DOWN
s OVERVOLTAGE CLAMP
s THERMAL SHUT-DOWN
s CURRENT LIMITATION
s VERY LOW STAND-BY POWER DISSIPATION
s PROTECTION AGAINST:
LOSS OF GROUND & LOSS OF VCC
s REVERSE BATTERY PROTECTION (**)
s IN COMPLIANCE WITH THE 2002/95/EC
EUROPEAN DIRECTIVE
DESCRIPTION
The VNQ600P-E is a quad HSD formed by
assembling two VND600-E chips in the same SO-
28 package. The VND600-E is a monolithic device
designed in| STMicroelectronics VIPower M0-3
Technology.
Figure 1. Package
SO-28 (DOUBLE ISLAND)
The VNQ600P-E is intended for driving any type of
multiple loads with one side connected to ground.
This device has four independent channels and
four analog sense outputs which deliver currents
proportional to the outputs currents. Active current
limitation combined with thermal shut-down and
automatic restart protect the device against
overload. Device automatically turns off in case of
ground pin disconnection.
Table 2. Order Codes
Package
SO-28
Note: (**) See application schematic at page 11.
Tube
VNQ600P-E
Tape and Reel
VNQ600PTR-E
October 2004
Rev. 1
1/20
1 page  
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VNQ600P-E
ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C<Tj<150°C unless otherwise specified)
(Per each channel)
Table 5. Power
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
VCC (**) Operating supply voltage
5.5 13
36 V
VUSD (**) Undervoltage shut-down
3 4 5.5 V
VOV (**) Overvoltage shut-down
36 V
RON On state resistance
IOUT1,2,3,4=5A; Tj=25°C
IOUT1,2,3,4=5A; Tj=150°C
IOUT1,2,3,4=3A; VCC=6V
35 mΩ
70 mΩ
120 mΩ
Vclamp Clamp Voltage
ICC=20mA (see note 3)
41 48 55 V
IS (**) Supply current
Off State; VCC=13V; VIN=VOUT=0V
Off State; VCC=13V; VIN=VOUT=0V;
Tj =25°C
On State; VCC=13V; VIN=5V; IOUT=0A;
RSENSE=3.9KΩ
12 40 µA
12 25 µA
6 mA
IL(off1)
IL(off2)
Off state output current
Off State Output Current
VIN=VOUT=0V
VIN=0V; VOUT=3.5V
0 50 µA
-75 0 µA
IL(off3)
IL(off4)
Off State Output Current
Off State Output Current
VIN=VOUT=0V; VCC=13V; Tj =125°C
VIN=VOUT=0V; VCC=13V; Tj =25°C
5 µA
3 µA
Note: 3. Vclamp and VOV are correlated. Typical difference is 5V.
Note: (**) Per island.
Table 6. Switching (VCC =13V)
Symbol
Parameter
td(on) Turn-on delay time
td(off) Turn-off delay time
(dVOUT/
dt)on
Turn-on voltage slope
(dVOUT/
dt)off
Turn-off voltage slope
Test Conditions
RL=2.6Ω channels 1,2,3,4 (see fig. 1)
RL=2.6Ω channels 1,2,3,4 (see fig. 1)
RL=2.6Ω channels 1,2,3,4 (see fig. 1)
RL=2.6Ω channels 1,2,3,4 (see fig. 1)
Min.
Typ.
40
40
See
relative
diagram
See
relative
diagram
Max.
Unit
µs
µs
V/µs
V/µs
Table 7. VCC - Output Diode
Symbol
Parameter
VF Forward on Voltage
Test Conditions
-IOUT=2.3A; Tj=150°C
Min Typ Max Unit
0.6 V
5/20
5 Page 
Figure 8. Application Schematic
+5V
Rprot
INPUT1
Rprot
Rprot
µC
Rprot
Rprot
Rprot
Rprot
Rprot
C. SENSE 1
INPUT2
C. SENSE 2
INPUT3
C. SENSE 3
INPUT4
C. SENSE 4
RSENSE1,2,3,4
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VNQ600P-E
VCC1,2
VCC3,4
OUTPUT1
OUTPUT2
OUTPUT3
GND1,2
OUTPUT4
GND3,4
VGND
RGND
DGND
Dld
Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2.
GND PROTECTION NETWORK AGAINST
REVERSE BATTERY
Solution 1: Resistor in the ground line (RGND only). This
can be used with any type of load.
The following is an indication on how to dimension the
RGND resistor.
1) RGND ≤ 600mV / 2(IS(on)max).
2) RGND ≥ (−VCC) / (-IGND)
where -IGND is the DC reverse ground pin current and can
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in RGND (when VCC<0: during reverse
battery situations) is:
PD= (-VCC)2/RGND
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where IS(on)max becomes the
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the RGND will
produce a shift (IS(on)max * RGND) in the input thresholds
and the status output values. This shift will vary
depending on how many devices are ON in the case of
several high side drivers sharing the same RGND.
If the calculated power dissipation leads to a large
resistor or several devices have to share the same
resistor then the ST suggests to utilize Solution 2 (see
below).
Solution 2: A diode (DGND) in the ground line.
A resistor (RGND=1kΩ) should be inserted in parallel to
DGND if the device will be driving an inductive load.
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift (j600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
Series resistor in INPUT line is also required to prevent
that, during battery voltage transient, the current exceeds
the Absolute Maximum Rating.
Safest configuration for unused INPUT pin is to leave it
unconnected, while unused SENSE pin has to be
connected to Ground pin.
LOAD DUMP PROTECTION
Dld is necessary (Voltage Transient Suppressor) if the
load dump peak voltage exceeds VCC max DC rating.
The same applies if the device will be subject to
transients on the VCC line that are greater than the ones
shown in the ISO T/R 7637/1 table.
µC I/Os PROTECTION:
If a ground protection network is used and negative
transients are present on the VCC line, the control pins will
be pulled negative. ST suggests to insert a resistor (Rprot)
in line to prevent the µC I/Os pins to latch-up.
The value of these resistors is a compromise between the
leakage current of µC and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up
limit of µC I/Os.
-VCCpeak/Ilatchup ≤ Rprot ≤ (VOHµC-VIH-VGND) / IIHmax
Calculation example:
For VCCpeak= - 100V and Ilatchup ≥ 20mA; VOHµC ≥ 4.5V
5kΩ ≤ Rprot ≤ 65kΩ.
Recommended Rprot value is 10kΩ.
11/20
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