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PDF GS8160V32AT Data sheet ( Hoja de datos )
| Número de pieza | GS8160V32AT | |
| Descripción | 1M x 18 512K x 32 512K x 36 18Mb Sync Burst SRAMs | |
| Fabricantes | GSI Technology | |
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100-Pin TQFP
Commercial Temp
Industrial Temp
Preliminary
GS8160V18/32/36AT-350w/3w3w3.D/3at0a0Sh/2ee5t04U/2.c0o0m/150
1M x 18, 512K x 32, 512K x 36 350 MHz–150 MHz
18Mb Sync Burst SRAMs
1.8 V VDD
1.8 V I/O
Features
• FT pin for user-configurable flow through or pipeline
operation
• Single Cycle Deselect (SCD) operation
• 1.8 V +10%/–10% core power supply
• 1.8 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
Functional Description
Applications
The GS8160V18/32/36AT is an 18,874,368-bit (16,777,216-bit
for x32 version) high performance synchronous SRAM with a
2-bit burst address counter. Although of a type originally
developed for Level 2 Cache applications supporting high
performance CPUs, the device now finds application in
synchronous SRAM applications, ranging from DSP main
store to networking chip set support.
Controls
Addresses, data I/Os, chip enables (E1, E2, E3), address burst
control inputs (ADSP, ADSC, ADV), and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by
the user via the FT mode pin (Pin 14). Holding the FT mode pin
low places the RAM in Flow Through mode, causing output
data to bypass the Data Output Register. Holding FT high
places the RAM in Pipeline mode, activating the rising-edge-
triggered Data Output Register.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS8160V18/32/36AT operates on a 1.8 V power supply.
All input are 1.8 V compatible. Separate output power (VDDQ)
pins are used to decouple output noise from the internal circuits
and are 1.8 V compatible.
Pipeline
3-1-1-1
Flow
Through
2-1-1-1
Parameter Synopsis
-350 -333 -300 -250 -200 -150 Unit
tKQ
tCycle
1.8 2.0 2.2 2.3 2.7 3.3 ns
2.85 3.0 3.3 4.0 5.0 6.7 ns
Curr (x18)
Curr (x32/x36)
395 370 335 280 230 185 mA
455 430 390 330 270 210 mA
tKQ
tCycle
4.5 4.7 5.0 5.5 6.5 7.5 ns
4.5 4.7 5.0 5.5 6.5 7.5 ns
Curr (x18)
Curr (x32/x36)
270 250 230 210 185 170 mA
305 285 270 240 205 190 mA
Rev: 1.00a 6/2003
1/24
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, Giga Semiconductor, Inc.
1 page  
TQFP Pin Description
Symbol
Type
A0, A1
A
I
I
DQA
DQB
DQC
I/O
DQD
BW I
BA, BB, BC, BD
CK
I
I
GW I
E1, E3
E2
G
I
I
I
ADV I
ADSP, ADSC
I
ZZ I
FT I
LBO I
VDD
VSS
VDDQ
NC
I
I
I
—
Preliminary
GS8160V18/32/36AT-350w/3w3w3.D/3at0a0Sh/2ee5t04U/2.c0o0m/150
Description
Address field LSBs and Address Counter preset Inputs
Address Inputs
Data Input and Output pins
Byte Write—Writes all enabled bytes; active low
Byte Write Enable for DQA, DQB Data I/Os; active low
Clock Input Signal; active high
Global Write Enable—Writes all bytes; active low
Chip Enable; active low
Chip Enable; active high
Output Enable; active low
Burst address counter advance enable; active low
Address Strobe (Processor, Cache Controller); active low
Sleep Mode control; active high
Flow Through or Pipeline mode; active low
Linear Burst Order mode; active low
Core power supply
I/O and Core Ground
Output driver power supply
No Connect
Rev: 1.00a 6/2003
5/24
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, Giga Semiconductor, Inc.
5 Page 
Preliminary
GS8160V18/32/36AT-350w/3w3w3.D/3at0a0Sh/2ee5t04U/2.c0o0m/150
Simplified State Diagram with G
X
Deselect
WR
WR
X
First Write
CW
R
CR
W First Read X
CW CR
W
X
R
Burst Write
CR
CW
R
W Burst Read X
CW
CR
Notes:
1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
3. Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
Rev: 1.00a 6/2003
11/24
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, Giga Semiconductor, Inc.
11 Page | ||
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| PDF Descargar | [ Datasheet GS8160V32AT.PDF ] | |
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