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PDF STB432S Data sheet ( Hoja de datos )
| Número de pieza | STB432S | |
| Descripción | N-Channel Logic Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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STB/P432S
Sa mHop Microelectronics C orp.
N-Channel Logic Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
9 @ VGS=10V
40V 60A
11 @ VGS=4.5V
FEATURES
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
G
S
S TB S E R IE S
T O -263(DD-P AK )
G
D
S
S TP S E R IE S
TO-220
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
TC=25°C
IDM -Pulsed b
EAS Sigle Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TC=25°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
40
±20
60
240
130
62.5
-55 to 150
2
50
Units
V
V
A
A
mJ
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Jun,24,2008
www.samhop.com.tw
1 page  
www.DataSheet4U.com
STB/P432S
Ver 1.0
15V
VDS
L
RG
20V
tp
D .U .T
IA S
0 .0 1
DR IVE R
+
- VDD
A
Unclamped Inductive Test Circuit
Figure 13a.
V( BR )D S S
tp
IAS
Unclamped Inductive Waveforms
Figure 13b.
2
1
D=0.5
0.2
0.1
0.1 0.05
0.02
0.01
S ingle P uls e
0.01
0.00001
0.0001
0.001
0.01
P DM
t1
t2
1. R JC (t)=r (t) * R JC
2. R JC=S ee Datas heet
3. T JM-T C = P * R JC (t )
4. Duty C ycle, D=t1/t2
0.1 1
Square Wave Pulse Duration (msec)
Figure 14. Normalized Thermal Transient Impedance Curve
10
Jun,24,2008
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STB432S.PDF ] | |
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