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PDF TSM6968SD Data sheet ( Hoja de datos )
| Número de pieza | TSM6968SD | |
| Descripción | 20V Dual N-Channel MOSFET w/ESD Protected | |
| Fabricantes | Taiwan Semiconductor Company | |
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TSM6968SD
www.DataSheet4U.com
20V Dual N-Channel MOSFET w/ESD Protected
Pin assignment:
1. Drain 1
2. Source 1
3. Source 1
4. Gate 1
5, Gate 2
6. Source 2
7, Source 2
8. Drain 2
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Specially designed for Li-ion battery packs.
Battery switch application
VDS = 20V
RDS (on), Vgs @ 4.5V, Ids @ 6.5A =25mΩ
RDS (on), Vgs @ 2.5V, Ids @ 5.5A =35mΩ
Block Diagram
Ordering Information
Part No.
TSM6968SDCA
Packing
Tape & Reel
3,000/per reel
Package
TSSOP-8
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @4.5V.
Pulsed Drain Current, VGS @4.5V
Maximum Power Dissipation
Ta = 25 oC
Ta = 70 oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Thermal Performance
Symbol
VDS
VGS
ID
IDM
PD
TJ
TJ, TSTG
Parameter
Junction to Foot (Drain) Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=10sec.
Symbol
Rθjf
Rθja
Limit
20V
± 12
6.5
30
1.5
0.96
+150
- 55 to +150
Limit
35
83
Unit
V
V
A
A
W
oC
oC
Unit
oC/W
oC/W
TSM6968SD
1-5 2005/04 rev. A
1 page  
www.DataSheet4U.com
TSSOP-8 Mechanical Drawing
TSSOP-8 DIMENSION
DIM
MILLIMETERS
MIN MAX
INCHES
MIN MAX
A 6.20
6.60
0.244
0.260
a 4.30
4.50
0.170
0.177
B 2.90
3.10
0.114
0.122
C 0.65 (typ)
0.025 (typ)
D 0.25
0.30
0.010
0.019
E 1.05
1.20
0.041
0.049
e 0.05
0.15
0.002
0.009
F 0.127
0.005
L 0.50
0.70
0.020
0.028
TSM6968SD
5-5 2005/04 rev. A
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet TSM6968SD.PDF ] | |
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